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In this work, we propose for the first time a Verilog-A physics-based compact model of Random Telegraph Noise (RTN) in Resistive Random Access Memory (RRAM) devices. Starting from the physics of the RTN mechanism in both high (HRS) and low (LRS) resistive states, and combining experimental data with physics-based simulations, we develop and validate a complete compact model of RTN in RRAM devices...
This work presents a novel Si-on-SiC laterally-diffused (LD) MOSFET structure intended to provide high breakdown voltage of 600 V and be resistant for harsh-environment space applications. Single-event effects (SEE) and total ionizing dose (TID) are investigated for the first time in such device. Initially, the considered Si LDMOS structure on SiC suffers from single-event burnout (SEB) at a drain...
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