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In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the...
We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous FETs by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 layer. Pre-patterned electrodes offer the possibility of reducing the exposure time of exfoliated flakes to oxidant agents with respect to top-contacted devices and maximize the accessible area for sensing applications...
For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or atomic layer deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues...
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