The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The influence of forward current freewheeling time on the reverse recovery di/dt robustness of Superjunction (SJ) MOSFET body diode is investigated in detail. It is found that the maximum di/dt capability of body diode is improved dramatically with reducing the forward current freewheeling time. To explore this phenomenon, physical TCAD simulations and experiments have been carried out. It shows that...
Electro optical techniques including EOFM (Electro Optical Frequency Mapping) and EOP (Electro Optical Probe) are common dynamic optical probing techniques used during failure analysis. This paper demonstrated two real cases to show the application of these techniques on the fault isolation of high resistive vias.
Defect localization of short failures has been a big challenge in modern advanced nanoscale devices. In recent years, Electron Beam Induced Resistance Change (EBIRCh) technique has been applied to failure analysis. The EBIRCh technique incorporated into SEM based nanoprobing system allows not only direct electrical characterization of suspicious bridge sites but also direct pinpointing of short defects...
A SPICE-level aging simulation methodology is developed to predict the NBTI degradation in short term and long term region. This methodology enables 10 years NBTI aging prediction under any bias conditions (including stress and recovery) by completing the time-tracing and extrapolation procedures in a single step. The proposed methodology significantly improves the speed of the long term simulation...
A Testing system for transient irradiation experiment is designed to explore the transient ionizing radiation effects in an 8bit three state output bidirectional buffer. Signal responses of this circuit irradiated with high dose rate gamma rays are obtained. In particular, changes of output and supply voltage for the circuit are focused. The experiment results show that the recovery situation of signal...
In this paper, the gated imaging technique of dynamic photon emission is realized and introduced as a powerful localization tool by using a low-cost near-infrared InGaAs image intensifier (I.I). At first, the setup and the method for gated imaging of photon emission microscope (GI-PEM) are presented. As one of global localization tools, it shows an unique and economical debugging and pinpointing capabilities...
The performances of 4H-SiC power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with defects induced by cosmic radiations are studied in this paper. By SRIM and SILVACO T-CAD simulations, the radiation effects on the electrical parameters of the device are observed. The results indicate that the radiations from different directions induce defects in different regions of the device. The...
As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
Electron beam absorbed current (EBAC) has been used to isolate defects in BEOL metal stacks. With the increasing layout complexity, metal signal lines often run over 100um area and over multiple metal stacks. This makes SEM inspections during polishing tedious, time consuming and easy to overlook the defect. With the EBAC technique, it often shows the entire routing of the signal line with additional...
Lack of accurate ESD device models and CAD methods makes on-chip ESD protection circuit design optimization and verification impossible. This paper reports a new circuit-level ESD protection simulation method using ESD behavior models to quantitatively analyze the ESD discharging functions at chip level, including checking the transient node voltage and branch current on a chip during ESD events....
The combined benefits of reduced package footprint, higher input/output capability, better power and ground distribution and reduced signal inductance has made the flip chip package technology a primary packaging solution for portable consumer electronics as well as commercial/industrial applications. The technology qualification step ensures the highest quality and reliability performance on devices...
A novel 2×VDD-tolerant electrostatic discharge (ESD) detection circuit which uses only low-voltage devices is proposed in a 0.18 um CMOS process. Under normal operating conditions, all the devices are free from over-stress voltage threat. Our proposed detection circuit achieves a high triggering efficiency with a much smaller footprint. Comparing with the RC based detection circuit, our proposed circuit...
This is a case study of an early failure analysis on a chip fabricated on the 40nm technology node. A large leakage current was observed in the high voltage (HV) supply after the chip was stressed as a part of an early failure rate (EFR) test. Electrical failure analysis (EFA) using Backside Emission spectroscopy [1] and Optical Beam Induced Resistance Change (OBIRcH) [2] showed the existence of hotspots,...
Si nanocrystal samples were fabricated by pulsed laser deposition method. Through changing the growth Ar gas pressure, the Si nanocrystal size and density can be controlled. Our works provided a possible way to fabricate Si nanocrystal embedded nonvolatile memory.
We evaluate a method for localization of thermal source by using optical probing. A two-dimensional imaging of infrared radiation is commonly used as localization of thermal source. At the flow of failure analysis, thermal lock-in (LIT) method by InSb camera is used to detect a leakage and short point in a package and power device sample. However, an accuracy of localization is not enough due to the...
Anti-stiction coatings are frequently deposited onto MEMS surfaces to prevent moving structures from getting stuck. Therefore, in order to resolve stiction issues during MEMS production, it is important to characterize the anti-stiction coating effectively. Time-of-Flight SIMS was found to be very useful to this purpose, where the C2F4 signal from the perfluoro-decyltrichlorosilane (FDTS) anti-stiction...
The GOX is the most fragile element of a MOS transistor. With the scaling of device, the GOX thickness has been reduced to a few atomic layers, therefore any tiny defects in gate oxide can lead to high leakage current and even gate oxide breakdown. FIB/TEM analysis and chemical wet etching pinhole technology are usually adopted to characterize GOX leakage defect. However, TEM by FIB-cross section...
In this paper, the influences of sandwiched structure trench on the latch-up reliability of the LIGBT with thick SOI substrate are investigated. Based on the influence mechanisms, a novel device structure with trench grounded is proposed, which can enhance the latch-up voltage by 24% with the other performance maintained. Further studies illustrate that the latch-up voltage would decrease dramatically...
Carbon particle is not able to be detected by X-ray, so it is always a challenge to find out the defect mode if caused by conductive carbon particle in package. A non-destructive, quick and precious fault localization method with lock-in thermography (LIT) was demonstrated and follow up physical analysis (PFA) was performed. Consequently, conductive carbon particle was confirmed as the root cause...
In this study, the maximum spatial resolution of infrared thermal imager is 3 μm, and the gate length of AlGaN/GaN HEMTs is between 0.2 μm and 1 μm. Therefore, the infrared thermal imaging instrument measurement results are only an average temperature that is lower than the actual temperature. By combining infrared thermal imaging with Sentaurus TCAD simulation, the junction temperature of AlGaN/GaN...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.