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Traditional ESD protection program cannot meet requirements of higher ESD protection grade and parasitic parameter of protection devices when using V-by-One high-speed interface chip. This paper proposes an effective ESD protection program by way of reverse analysis and design of a VBO-based high-speed interface chip failure case. The program introduces a new SCR structure replacing the original diode...
This paper reports a study of transient behaviors of diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharging (ESD) protection structures for ultra-fast Charged Device Model (CDM) ESD protection. The DTSCR ESD protection structures, fabricated in a 28nm CMOS process, were characterized using a new combined Very Fast Transmission Line Pulse (VFTLP) testing and TCAD simulation...
Conductive atomic force microscopy (CAFM) was used to investigate nano-electric performances of semiconductor MOS (metal-oxide-semiconductor) devices. Due to the small tip size (as small as ∼20 nm for PtSi probes), CAFM is capable of imaging both topography and current information of nano-device structures simultaneously with very high lateral resolution. Due to the use of wide ranges of current amplifier...
A Testing system for transient irradiation experiment is designed to explore the transient ionizing radiation effects in an 8bit three state output bidirectional buffer. Signal responses of this circuit irradiated with high dose rate gamma rays are obtained. In particular, changes of output and supply voltage for the circuit are focused. The experiment results show that the recovery situation of signal...
In this paper, the influences of sandwiched structure trench on the latch-up reliability of the LIGBT with thick SOI substrate are investigated. Based on the influence mechanisms, a novel device structure with trench grounded is proposed, which can enhance the latch-up voltage by 24% with the other performance maintained. Further studies illustrate that the latch-up voltage would decrease dramatically...
In this work, presence of multi-trap energy (MTE) levels in the GaN energy bandgap of AlGaN/GaN HEMT is studied based on conductance method as well as temperature-dependent current transient measurements. Using conductance method, it is observed that the MTE model shows a better fit with the measurement data as compared to the single-trap energy (STE) model. Temperature-dependent current transient...
As the device size shrinks beyond 45nm technology node, logic BEOL (back end of line) started adopting Cu/Ultra low k (ULK) to reduce RC delay. With the introduction of low k material, IMD TDDB is notably degraded as numerous publications reported. The impact of ULK material deposition process, barrier layer deposition process on TDDB performance were investigated and discussed in-depth in this paper...
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