The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The clamped inductive turn-off failure of Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (SOI-LIGBT) with multi-finger layout pattern is investigated in this paper. Firstly, the measurements of device failure under clamped inductive turn-off are discussed. Secondly, simulations are carried out to reproduce the failure by using Sentaurus TCAD. It is found that the failure origins from...
LIHT (Lack Injection of Hole Termination) structure is proposed and studied. Compared with conventional termination structure, the novel structure features a partial N-doped anode in the transition region and termination region instead of a whole P-doped anode. The LIHT structure stores less carries in the drift region of the transition region and termination region, in which holes concentration reduced...
This paper describes the case study of test method of gate source failure and the fault localization approach with aid of device physics theory. The nominal behaviour of IGBT device is turn on the moment gate voltage reaches the threshold voltage. However, in this case the device turn on before the gate voltage reaches to the ideal threshold voltage due to distracted by Gate-source capacitance. On...
Recent advancement in high-voltage and high power technology in PIM have been remarkable, and PIM are being used for the applications of GTO thyristor. Power Integrated Module (PIM) is an integrated power module combines high-performance IGBTs with rugged anti-parallel diodes on multi-layered module package. This presents a challenge to perform advance die-level failure analysis due to the special...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.