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The three-dimensional (3-D) NAND flash memory technology has been considered as a promising candidate for future memory solutions, because it overcomes the scaling limitation and reliability issues faced by conventional planar memory. Even though 3-D NAND flash memory structures have many merits, self-heating effect is aggravated seriously due to the poor thermal conductivity of some of the materials...
High Power Diodes are essential elements for electronics systems. During their operation, high Thermal Resistance will account for electrical characteristic degradation, affecting the operation of electronics systems. Hence an effective method to screen the devices with high thermal resistance is required. ΔVf test is known to be a suitable method for screening out the devices with poor solder quality...
In the present study, Ge2Sb2Te5 thin films have been deposited on Si (100) substrate by magnetron sputtering. We investigated microstructure and texture formation of Ge2Sb2Te5 thin films during annealing. Our characterization results show that face-centered cubic (fcc) rock-salt structure formed in 250 °C annealed thin films, and both fcc and close-packed hexagonal (hcp) structure exist in 350 °C...
In this study, a four-layer stacked chip simulation model is built under standard JEDEC environment, the heat dissipation path and temperature distribution of the stacked chip is analyzed. Based on linear superposition method, a method of estimating the temperature of stacked chip using thermal resistance matrix is proposed, and the function relationship between the power consumption and the element...
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