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Recently, FInFET is introduced to deliver products with higher speeds and power efficiencies. Due to its 3D structure, FinFET results in complexity during the failure analysis process. Conventionally, the failure analysis (FA) starts with electrical failure analysis (EFA) to isolate the fault and follows by the physical failure analysis (PFA) to find the root cause. However, for the advanced technology,...
Defect localization of short failures has been a big challenge in modern advanced nanoscale devices. In recent years, Electron Beam Induced Resistance Change (EBIRCh) technique has been applied to failure analysis. The EBIRCh technique incorporated into SEM based nanoprobing system allows not only direct electrical characterization of suspicious bridge sites but also direct pinpointing of short defects...
The continuous scaling of device dimension and the introduction of FinFET technology has led to new reliability concerns, such as Bias Temperature Instability (BTI), Stress-Induced Leakage Current (SILC), Self-Heat Effect (SHE) and Time Dependent Junction degradation (TDJD). These reliability issues become process and design bottle neck for the advanced technology development because of their stringent...
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