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In this paper, we performed accelerated degradation testing (ADT) of a certain type of driver IC under different humidity stress levels. We keep the drivers in storage under same temperature but different humidity; measure the determined sensitive parameter of the driver with fixed time interval, then model the degradation path to obtain the pseudo-failure lifetime. Finally, we analyze the test data...
An investigation of radiated reliability of HBT and MOSFET which fabricated on 0.35 μm SiGe BiCMOS technology is presented under dose rates of 500 mGy(Si)/s and 1 mGy(Si)/s with a 60Co γ irradiation source. Gummel characteristics of SiGe HBT and transfer characteristics of MOSFET are measured before and after irradiation. Base current (IB), leakage current (IOFF) and threshold voltage (VTH) are extracted...
An analytical model for the conduction characteristics of commercially available light-emitting diodes (LED) subjected to severe degradation conditions is reported. The devices were stressed at different temperatures in the range from 27°C to 80°C using high-current (80mA) accelerated life-tests. First, a modified compact model for the fresh I-V characteristic of the devices is presented. Instead...
In this paper, it is reported for the first time that, in nanoscale high-k/metal-gate MOSFETs, the hot carrier degradation (HCD) follows a two-stage law in some stress conditions. Both interface traps and oxide traps contribute to HCD causing its time-dependence varies with different stress modes. The results are helpful for the physical understanding of HCD in nanoscale devices.
A SPICE-level aging simulation methodology is developed to predict the NBTI degradation in short term and long term region. This methodology enables 10 years NBTI aging prediction under any bias conditions (including stress and recovery) by completing the time-tracing and extrapolation procedures in a single step. The proposed methodology significantly improves the speed of the long term simulation...
Anti-stiction coatings are frequently deposited onto MEMS surfaces to prevent moving structures from getting stuck. Therefore, in order to resolve stiction issues during MEMS production, it is important to characterize the anti-stiction coating effectively. Time-of-Flight SIMS was found to be very useful to this purpose, where the C2F4 signal from the perfluoro-decyltrichlorosilane (FDTS) anti-stiction...
In this study, we investigate the Ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase Ron degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the Ron degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices. The model is used to identify and characterize the dielectric...
The continuous scaling of device dimension and the introduction of FinFET technology has led to new reliability concerns, such as Bias Temperature Instability (BTI), Stress-Induced Leakage Current (SILC), Self-Heat Effect (SHE) and Time Dependent Junction degradation (TDJD). These reliability issues become process and design bottle neck for the advanced technology development because of their stringent...
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