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An analytical model for the conduction characteristics of commercially available light-emitting diodes (LED) subjected to severe degradation conditions is reported. The devices were stressed at different temperatures in the range from 27°C to 80°C using high-current (80mA) accelerated life-tests. First, a modified compact model for the fresh I-V characteristic of the devices is presented. Instead...
Failure analysis on static condition (static leakage and standby current level) failed device would not cost long time to find root cause, but dynamic functional failure will. Failure analysis with dynamic strategy to localize a failure point is more significant in complicated function failed IC (Integrated Circuit). This paper would present an efficient strategy to locate the defect using dynamic...
The effects of fast neutron radiation up to flux of 1014 cm−2 (1 MeV equivalent flux) upon the turn-on and forward static characteristics of MOS-Controlled Thyristor (MCT) are described in this work, based on physics-based 1-dimension analytical calculation and 2-dimension Silvaco simulation. It is reported for the first time that dependency of on-state specific resistance (Ron) upon neutron flux...
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