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ZnO nanowire field emitter arrays with non-coplanar focus electrode structure was designed. A simulation was conducted to verified the focusing ability of the focus electrode structure. The designed structure was realized successfully and the growth condition of ZnO nanowires in the structure was studied.
The feasibility of preparation of nanowire on glass favors the realization of large area devices, which makes nanowire field emitter arrays (FEAs) good candidate for large-area vacuum microelectronics applications. In this study, a coaxial gated ZnO nanowire FEAs was fabricated. Effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated.
Fluorine doping of ZnO nanowires was realized by using a biased CF4 plasma treatment. The morphology, work function, electrical characteristics and field emission properties of ZnO nanowires were investigated before and after CF4 plasma treatment. Though lowered work function and resistance were observed, the ZnO nanowires exhibit higher turn-on field after CF4 plasma treatment. The results were explained...
ZnO nanowires have potential applications as large area field emitters for plat panel x-ray source and high emission current is needed for such application. In this study, patterned ZnO nanowires with different separations have been fabricated on ITO coated glass substrate by thermal oxidation technique. It is found that the separation of the patterns affects the growth of ZnO nanowires. The field...
A transparent cold cathode panel was fabricated and applied in a double-side emitting light source using ZnO nanowire field emitter arrays(FEAs). ITO thin film coating on starting Zn film was adopted to modify the morphology and field-emission properties of ZnO nanowires. The transparent ZnO nanowire cold cathode panel shows more than 84.7% transmission in the visible light region. A fully sealed...
Using the ZnO nanowire emitters with the photoconductor as the anode, the concept of a light-responsive field emission display (FED) was demonstrated. The brightness of display can be automatically increased with the increasing of external light-intensity. Additionally, the photo/dark current ratio can be controllably adjusted by changing the device parameters. The response of conductivity of photoconductor...
Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) was used as active driving device for ZnO nanowire field emitters. The characteristics of ZnO FEAs controlled by a-IGZO TFT were studied. Low driving voltage, precise control and stabilization of field emission current are achieved.
A transmission anode flat panel X-ray source with the ZnO nanowire field emitter arrays(FEAs) has been realized. The thickness of the transmission-type flat panel X-ray target has been optimized to maximize the output intensity of X-rays. The EGSnrc-based Monte Carlo codes are utilized to simulate the X-ray intensity and spectrum generated from the target. The simulation results show that the target...
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