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In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
We have continued our investigation of the tunneling currents between CNTs dispersed randomly in the 3-dimensional potential of a dielectric medium. In addition to the configurations of CNTs which give a 2 orders of magnitude higher current than the standard tip to tip configuration studied previously we have discovered CNT configurations which do the opposite i.e. give currents which are 2 orders...
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