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The paper presents a model for analyzing the impact of power-supply periodical interference in ring oscillator. With the model, the net frequency shift of ring oscillator can be calculated based on the static response of the inverter delay and the probability density function of the periodical interference. Interference of various waveforms such as sinusoidal, triangle-like and square are studied...
A single-element of phased-array receiver front-end has been developed in 0.13µm CMOS for 26–29GHz application. This design uses the All-RF architecture with LNA and phase shifter blocks to achieve lowest NF, rms gain error and rms phase error. The 26–29GHz single-element achieves a post-simulation result NF of 6.5dB, rms gain error of 1.9dB, rms phase error of 7.5 degree at 27.5 GHz. The whole circuit...
This paper presents a 24.25–26.65 GHz 6-bit phase shifter in 65nm CMOS technology. The proposed architecture of the phase shifter divides the 6-bit phase shifter into one 3-bit and three 1-bit sub phase shifters. The low resolution sub phase shifters can be implemented just by switches and sub VGA cells which can lower the phase error apparently. The phase shifter results in a simulated RMS phase...
In this paper, we first analyze an LNA core, cascode structure cut off frequency and power gain relationship with device parameters. Then we discuss the LNA design differences between FET LNA and SiGe LNA during design optimization. SOI floating body FETs have advantages in higher Ft in the optimized current biased region and can offer more design flexibility, while SiGe NPNs need much less trade...
This paper discusses mm-wave CMOS transceiver IC design focusing on the techniques to increase the transmission data rate. Basic design key points are the increase of bandwidth, the increase of SNR, the decrease of phase noise in quadrature oscillator and frequency interleaving technique. Thus we selected the direct conversion architecture with resistive feedback amplifier to realize the wideband...
This paper discusses wideband millimeter-wave (mm-wave) circuits based on coupled resonator. Compared with conventional RLC resonator, the coupled resonator has more degrees of design freedom, with small chip area overhead. The coupled resonator also has the following useful properties: frequency boosting, “phase plateau” and wideband response, which are utilized to implement a wideband injection-locked...
A newly structured 150GHz divider-by-2 injection-locked frequency (ILFD) is designed in a 65-nm CMOS technology. This ILFD uses a new adjustable inductor tuning technique and time-interleaved dual-injection method to improve the frequency division range. A 1-bit binary-weighted switch-capacitor is also used to widen the locking range. From the post-layout simulation result we can see that four self-resonance...
A low phase noise voltage-controlled oscillator for mm-wave applications is presented. The oscillator uses switched-capacitor technique to increase the tuning range. The measured results show that the oscillator achieves a phase noise of −100dBc/Hz at 1MHz offset from the carrier frequency of 49.7GHz, while consuming 5.5mA current from a 0.9V supply. A wide tuning range percentage of 12%, i.e. 43...
Recent progress in the development of future high-density optical interconnects based on integrated silicon photonics technologies is presented. Optical interconnects by using on-package-type module between CPUs and the potential for use of wavelength-division-multiplex (WDM) toward a higher-amount of data transmission are discussed. The optical link test was successfully demonstrated using our proposed...
Light-emitting diodes (LEDs) have been fabricated by using hydrosilylated silicon quantum dots (Si QDs). In these Si-QD LEDs ZnO-nanocrystal films are electron transport layers (ETLs). Poly (N,N′-bis (4-butylphenyl)-N,N′-bis (phenyl)-benzidine) (poly-TPD) films are hole transport layers (HTLs). All the Si-QD LEDs exhibit electroluminescence around the wavelength of ∼740 nm. Relatively low turn-on...
Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based...
A multi-color solid-state display structure has been fabricated and characterized, which is based on phase changing material (PCM) and indium tin oxide. By modulating the crystalline phase of PCM, three or more colors can be realized dynamically on a single structure. Experimental results agree well with simulations. This work demonstrates that PCM-based solid-state display structure has potential...
In this paper, we propose a Nano-pillar HIT solar cell by using different etching methods. First, we use silvaco TCAD Atlas to simulate and discuss the structure. According to simulation results, we obtain a 25.58% conversion efficiency Nano-pillar HIT solar cell which is better than the conventional HIT solar cell (24.7%) [1]. All of the parameters are the same, which is calibrated form [1]. The...
We reported the perovskite based field effect transistors (CH3NH3PbI3-FETs) using HfO2 as the bottom gating dielectrics. A typical hysteresis behavior has been observed in the transfer characteristics of CH3NH3PbI3-FETs with a large hysteresis window. The modulation of gate voltage on the hysteresis behaviors has been demonstrated by applying different gate voltage sweeping ranges. The shift of hysteresis...
Filament rupture/restoration induced by movement of defects, e.g. oxygen ions/vacancies, is considered as the switching mechanism in HfO2 RRAM. However, details of filament alteration during switching are still speculative, due to the limitations of existing experiment-based probing techniques, impeding its understanding. In this work, for the first time, an RTN-based defect tracking technique is...
An analytic formula based on stochastic differential equation is successfully developed to describe intrinsic ReRAM variation. The formula is useful to predict scaled ReRAM memory window after retention, verified by testing 40 nm 2Mb memory array.
Hidden in the widely accepted filamentary conduction mechanism for TMO ReRAM is that only a few atoms/vacancy defects control the resistance, thus these devices are intrinsically vulnerable to statistical fluctuation. Experimental results show that individual cells behave randomly and programming outcome for any single cell is unpredictable. Statistically, however, the cells in a memory array follow...
Fast machine learning is required for future real-time data analytics. This paper introduces a 3D multi-layer CMOS-RRAM accelerator for learning on neural network. Given input of buffered data hold on the layer of a RRAM memory, intensive matrix-vector multiplication can be firstly accelerated on the layer of a digitized RRAM-crossbar. The remaining algorithmic operations such as feature extraction...
Oxide-based resistive random access memory (RRAM) has been widely studied as the promising candidate for the applications of next generations of data storage and computing technologies. In this paper, we will discuss the physical mechanism and optimization design of oxide-based RRAM devices, the novel RRAM-based computing/memory unifying architectures and the applications for data storage and computing...
Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells...
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