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The scaling behavior of MOSFETs based on two-dimensional (2D) materials is investigated by means of numerical simulation and analytical modeling. Due to their ultimate thinness, 2D channel materials like MoS2 are perfectly suited to push the scaling limits beyond those of silicon. The electrostatic integrity of 2D transistors is governed by the chosen device architecture, substrate material, and gate...
We are facing many challenges for future nanoelectronic devices in the next two decades dealing with scaling, power consumption and computing performance. This paper presents the most promising solutions for the end of the roadmap in the More Moore and Beyond-CMOS fields, including innovative nanomaterials such as ultra-thin Si-Ge-III–V/OI, 2D layers (graphene, phosphorene, various transition-metal...
This paper presents a 160×120 size 17µm pixel pitch TEC-less uncooled infrared image sensor with low noise output and low power consumption. Aimed at power-saving TEC-less applications, offset skimming and gain stabilization techniques according to substrate temperature change are proposed and implemented. Each column is integrated with a low-power, low-noise backend readout stage including a CTIA...
This work investigates the static noise margin (SNM) of 6T SRAM composed of 2D semiconductor MOSFETs. A analytical current-voltage model for 2D semiconductor MOSFETs is applied to analyze all transistors in a 6T SRAM. Simulation model and method are built for basic 6T SRAM structure and that with S/D contact resistance. Effects on SNM of contact resistance and inefficient channel doping are studied,...
We demonstrate a facile method to grow highly uniform monolayer graphene films on copper foils by atmospheric pressure chemical vapor deposition (APCVD). The technique in this method includes lowering flow ratio of methane/hydrogen and extending exposure time to hydrogen. All the multilayer islands will be etched away by hydrogen during this growth process, resulting in obtaining highly uniform monolayer...
Single drain select transistor (DSL) in 3D Flash memory may exhibit higher leakage as compared with DSL in 2D NAND, because of worse subthreshold swing characteristics due to poly-Si channel. Select transistor leakage suppression is essential in 3D NAND Flash Memory, in consideration of boosting potential and program disturbance. Compared to single Si drain select transistor in 2D planner Flash Memory,...
In this paper,the influence of signal and noise on digital demodulator as well as the importance of a reasonable threshold are elaborated. A new method of threshold setting is presented, which is adjusted according to signal and noise. Furthermore, the advantage of this model is analyzed.
In this paper, the RBSOA characteristic of nanoscale Partially Narrow Mesa IGBT (PNM-IGBT) is studied by numerical simulation. Result shows that the maximum turn-off critical current of nanoscale PNM-IGBT increases about 12.3% compared with the conventional trench IGBT. The main reason is that the electric field distribution of PNM-IGBT at turn-off state is more flat and uniform than the conventional...
This paper proposes a Reconfigurable and Fault-tolerant Routing Algorithm (RFRA), which is designed based on the Fault-Tolerant Odd-Even turn model (FTOE). RFRA can tolerate all single link failures without exploiting virtual channels by resetting the route rule. Applying FTOE rules, RFRA not only balances the load around the faulty link but also shortens the fault-tolerant paths. Simulation results...
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