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Launched in 2006, Nanoelectronics Research Initiative (NRI) is jointly funded by the US semiconductor industry and government agencies to support university research to explore non-conventional low-energy technologies that can outperform CMOS on critical applications in ten years and beyond. Alternative state variables, novel mechanisms, and emerging materials have been investigated to achieve low-power...
In this work, we report a feasible compact solution to enhance the dynamic performance of GaN-on-Si power devices by integrating a photon source into the drain terminal of a heterojunction field-effect transistor (FET). Photons can be generated from the photonic-ohmic drain (POD) synchronously with turning on of the channel current. These on-chip generated photons can optically pump the electron traps,...
The LTE-Advanced and its related market factors present many challenges for the RF power amplifier (PA) and front end designs. This paper reviews some of the emerging techniques such as dynamic supply voltage modulation, reconfigurable PA, FET stacking and power combining to solve these challenges for silicon based PAs. These techniques with advanced CMOS and SiGe technologies can benefit the future...
The threshold voltage variability of extremely narrow silicon nanowire channel FETs is intensively measured and statistically analyzed. The nanowire width is from 7nm down to 2nm. It is found that the Pelgrom coefficient of 7nm-wide nanowire FETs is much smaller than that of fully-depleted SOI FETs, while it rapidly increases as the nanowire width decreases down to 2nm. The increase in variability...
Polarity modulation of single-layer WSe2 field effect transistor is investigated by using hydrazine as a solution-processable and effective n-type dopant for WSe2. Compared to the intrinsic hole-dominant ambipolar behaviors, highly effective n-type doping characteristics are achieved after hydrazine treatment. It is found that the on-current improves obviously by one order of magnitude and the metal-WSe2...
In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling (BTBT) probability is proposed and experimentally demonstrated. Through implanting deep level impurities in the tunnel junction, continuous deep level states can be introduced to facilitate the BTBT process for significant BTBT probability boosting. Compared with conventional tunnel diodes,...
This work uses the mutual temperature compensation of threshold voltage and carrier mobility to establish the optimum overdrive voltage for a MOS transistor. A fully differential SAR ADC is designed using 65 nm technology with improved temperature and process stability and can work under supply voltage of 300 mV. Simulation results show that under VDD of 300 mV the ADC is able to achieve a peak ENOB...
Synchronous Switching Power Converters (SSPCs), which are suitable for fast-response high-efficiency applications, have become one of the research hot spots in recent years. A novel high-speed level shifter circuit with low power consumption is proposed in this paper, which is embedded in an integrated synchronous rectifier gate driver system. The proposed level shifter circuit consists of two parts:...
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