Numerical methods for microscopic modeling of electronic fluctuations are considered. A deterministic Boltzmann-Langevin method for simulation of the long-lasting correlations is proposed for a coupled hot-electron-hot-phonon gas in a polar semiconductor. The effects of the nonequilibrium phonons and the Pauli exclusion principle on spectra of the hot-electron noise temperature are demonstrated.
The microwave noise is used for experimental investigation of power dissipation in the channels for heterostructure field-effect transistors (HFETs). The problem is treated in terms of the hot-electron energy relaxation and the hot-phonon effect. The energy relaxation time and the hot-phonon lifetime are estimated for the GaN-based 2DEG channels at different electron densities, and the results are...
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.