The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Efficient and reliable Random Number Generator (RNG) are increasingly demanded in cryptographic applications, such as on-the-fly data encription/decription and as a general tool for data protection. Main requirement of RNG is a true randomness, which is achievable by means of physical randomness sources only. A True-RNG based on two independent Stochastic Processes (SP) is presented and discussed...
Terminal voltage fluctuation of lithium-sulfur cells and nickel-metal-hydride cells was measured in different time intervals since cell charging to full capacity. The power noise spectral density is of 1/fα type with exponent a varying in the range from 1 to 1.8. The main noise sources in charge storage systems are: i) fluctuation of potential barrier on the electrode-electrolyte interface (its height...
This paper presents an analytical comparison of two commonly used read-out structures for pulse oximeters, in a wearable application context. The objective is to analyze and highlight the trade-off between the SNR and the power consumption. The proposed analysis clarifies, by the means of analytical equations, the impact of the input photocurrent, the photodiode parasitic capacitance, the feedback...
Ionic Coulomb blockade is an electrostatic phenomenon recently discovered in low-capacitance ion channels/ nanopores. Depending on the fixed charge that is present, Coulomb blockade strongly and selectively influences the ease with which a given type of ion can permeate the pore. The phenomenon arises from the discreteness of the charge-carriers and it manifests itself strongly for divalent ions (e...
We revisit and improve the optical heterodyne technique for the measurement of the laser coherence, by digital acquisition of the beat-note and numerical analysis of the resulting signal. Our main result is that with the same experimental setup we reach the very “short-time linewidth” with the highest accuracy as well as the frequency noise spectrum.
Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak...
In this paper, we have investigated a novel stochastic resonance & particle swarm optimization (PSO) technique for weak signal detection from noisy signal (weak signal + internal noise). PSO technique is used to determine the optimal amount of noise for weak signal detection. Our proposed work is in Neyman-Pearson framework which maximizes the probability of detection PD for a fixed value of probability...
A simple as possible random process - a random telegraph signal with independent amplitudes, and underpinned by a point process with inter-arrival times specified by a one sided Cauchy probability density function, is shown to have a 1/f power spectral density. Integral, and statistical, expressions for the number of points in a set interval, and the arrival time of the kth point, are specified. An...
We discuss the thermal noise and the effect of input noise sources on the output noise of plasmonic Field Effect Transistors operating in a quasi-ballistic regime. The input noise strongly affects the output noise at large signals and when the detectors operate near the threshold, where the highest responsivity is reached. In the detection regime with a finite drain current, 1/f noise becomes dominant...
The microwave noise is used for experimental investigation of power dissipation in the channels for heterostructure field-effect transistors (HFETs). The problem is treated in terms of the hot-electron energy relaxation and the hot-phonon effect. The energy relaxation time and the hot-phonon lifetime are estimated for the GaN-based 2DEG channels at different electron densities, and the results are...
Flicker noise (1/f-like noise) is often used to assess the quality of various materials and devices. This phenomenon has been observed in different electrochemical devices or reactions (e.g., smart windows, pitting corrosion events). In our exploratory studies we consider how to measure and utilize 1/f noise for the quality assessment of supercapacitors. This task requires special attention because...
The assessment of deep traps in In0.3Ga0.7As nFinFETs by Generation-Recombination (GR) noise spectroscopy is described in this paper. The gate voltage dependence of the corner frequency is studied for several devices with different gate lengths. Both gate-voltage-independent and gate-voltage-dependent corner frequencies are found. It is shown that the noise type turns from GR to Random Telegraph Signal...
The standard DC and RF and characteristics were measured for the 28 nm p- and n- type MOSFETs. The charge based compact model EKV3 parameters were extracted and verified against measured data. Noise parameters for both n- and p-MOSFETs were measured and analyzed in terms of gate induced noise correlation with the drain current noise, short channel effects related noise. The PRC noise model as well...
Low frequency noise is investigated in n-type UTBOX transistors presenting different channel orientations (standard μ100ξ and rotated μ110ξ). It was observed that decreasing temperature reduces the 1/f noise level particularly for a short rotated device. However, unexpected variation of the flicker noise in strong inversion was observed for the long rotated channel. Furthermore, evolution of generation-recombination...
The low-frequency noise behavior in linear operation of input-output (I/O) pMOSFETs for Dynamic Random Access Memory (DRAM) applications is studied for different process conditions: the 5 nm SiO2/2 nm HfO2/TiN stack is compared with a wafer subjected to a post-deposition SF6 plasma treatment and with a split where TiN is replaced by a TaN metal gate. It is shown that while the variability in the noise...
This work proposes an experimental demonstration of the stochastic resonance, a phenomenon widely observed in biology using a 65 nm CMOS artificial neuron. The stochastic resonance has been revealed through two different statistical studies. Moreover, when optimal, a signal to noise ratio at the output of the artificial neuron of 22.4 dB is achieved, for an ultra low power consumption, lower than...
In this paper we consider heterogeneous diffusion processes with the power-law dependence of the diffusion coefficient on the position and investigate the influence of external forces on the resulting anomalous diffusion. We obtain analytic expressions for the transition probability as well as for the first and the second moments. By using these expression we demonstrate that the power-law exponent...
In this paper, Buried-Channel and Native MOSFETs are thoroughly investigated in terms of Low Frequency Noise (LFN) variability for different bias and area conditions. These devices are compared with standard bulk CMOS transistors indicating lower levels of LFN regarding both its mean value and its variability. Moreover a recently proposed compact MOSFET model for LFN and its variability, is validated...
Correlating noise figure measurements between R&D teams and manufacturing teams is becoming both more difficult and more important as LNAs are increasingly integrated with other components such as switches, filters and power amplifiers, to form a Front-End-Modules (FEM) used in wireless devices, thus the test systems must accommodate more complicated test scenarios than a simple LNA requires....
We propose a simple topology for the realization of ultra low noise differential-input, differential-output preamplifiers. The input devices can be either low noise JFET pairs (for high impedance sources) or low noise BJT pairs (for minimum low frequency voltage noise). Besides the input devices, the circuit requires only two matched low noise BJT transistor pairs (either PNP or NPN, depending on...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.