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When performing voltage noise measurements on a biased device, the DC component due to the bias must be rejected in order to avoid saturation of the high gain low noise input stage of the voltage amplifier employed to raise the level of the signal prior to sampling for spectral analysis. This is normally done by interposing an RC high pass filter between the device and the DC coupled amplifier input...
The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through...
Numerical methods for microscopic modeling of electronic fluctuations are considered. A deterministic Boltzmann-Langevin method for simulation of the long-lasting correlations is proposed for a coupled hot-electron-hot-phonon gas in a polar semiconductor. The effects of the nonequilibrium phonons and the Pauli exclusion principle on spectra of the hot-electron noise temperature are demonstrated.
We report on ac-driven electroconvection (EC) in a nematic liquid crystal (NLC) under superposed multiplicative noise; the EC system consists of a thin layer (d = 10–100 µm) of an NLC in an applied electric field. Ac-driven traveling waves (TWs) have been one of attractive EC showing a Hopf bifurcation, which have been well explained by a weak-electrolyte model. In this paper, noise-induced traveling...
The measurement complex based on the cryostat Janis CCS-400/204N that allows making measurements in vacuum in temperature range 7–500 K is described. Thus a high sensitive measurement complex is developed to investigate noise power spectral density in the frequency range 10−3–104 Hz, temperature range 7–500 K and DC voltage range at samples 0–50 V.
We applied the noise spectroscopy technique as a powerful tool for the investigation of nano-sized bio-objects. The electrical and noise properties of the fabricated liquid-gated Si nanowire field-effect transistors as well as the influence of biomolecule attachment events on the nanowire structure were studied. We revealed that the dimensionless Hooge parameter can be used as a figure of merit for...
Low-frequency noise and I–V characteristics of reverse-biased thin-film chalcopyrite CIGS solar cell with a metal wrap through architecture were measured in order to evaluate the efficiency of edge deletion by a fine grinding and polishing. These electrical measurements were supplemented by a microscale exploration of the edges, electroluminescence mapping, and lock-in IR thermography. Research efforts...
We report noise-induced threshold shifts in ac-driven electroconvection (EC) in nematic liquid crystals (NLCs). It has been known that noise plays a role in stabilization (fc > fc*) or destabilization (fc < fc*) effects on EC depending on its cutoff frequencies fc; therefore, these effects monotonically increase (fc > fc*) or decrease (fc < fc*) the EC threshold Vc. However, we have found...
We report on experiments performed in order to verify the ability of low frequency noise measurements to serve as a sensitive tool for the characterization of the degradation of electron devices on flexible substrates as a consequence of mechanical stress. We designed and build a dedicated stress chamber for performing stress (repeated bending) in controlled environmental conditions. Test devices...
Analysis of existing theoretical concepts in low-frequency noise generation mechanisms in semiconductor barrier structures is performed. It is shown that investigation and simulation of voltage-noise characteristics offer an opportunity to calculate deep level parameters more precisely and to predict semiconductor devices reliability.
It is shown that the free charge carrier capture-emission process causes both the charge carrier density and mobility fluctuations. In this report we present the calculation results in order to find out how the capture-emission process affects the free charge carrier mobility, and how the latter impacts the low-frequency noise level. The carrier mobility dependence on phonon, impurity and carrier-carrier...
We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10−10 W/Hz1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power.
Deep level transient spectroscopy (DLTS) is widely spread characterization method of traps in semiconductor material, however, it is hardly applicable to devices with a high leakage current. Due to this reason, DLTS results for narrow-band semiconductor devices are still lacking. In many cases, low-frequency noise spectroscopy (LFNS) can overcome the limitations of DLTS, because current fluctuations...
In this paper, we present a consistent perspective to interpret the channel noise of MOSFETs as suppressed shot noise for both long- and short-channel devices. We also derive an easy-to-use analytical equation for the shot noise suppression factor of MOSFETs working in the saturation region. The expression only relies on two process parameters - threshold voltage and effective oxide thickness, to...
We review results of our studies of the low-frequency electronic noise in quasi-1D TaSe3 nanowires of. The semi-metallic TaSe3 is a quasi-1D van der Waals material with an exceptionally high breakdown current density. Our noise studies showed that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I2, compared to carbon nanotubes and graphene. The temperature-dependent...
Low frequency noise (LFN) characteristics can limit the performance of conventional CMOS designs. In the context of this paper enclosed gate N- and P-MOS transistors will be examined regarding LFN mean value and its variability in various biasing conditions. In subthreshold region enclosed gate PMOS transistors show a significantly reduced LFN variability compared to the NMOS counterpart. Both devices...
By adaptively approximating the characteristic function to the required power by cubic spline functions, the probability density function of a sum of pulse functions with random amplitude and delay, can be approximated with good accuracy and over a wide range. The efficacy of the approach is shown by the determination of the probability density function evolution of a pulse train. Simulation results...
Noise is both an asset and a hindrance. Noise as an asset represents a powerful non-destructive tool to study defects, track manufacturing processes and better understand aspects of charge transport in semiconductor devices. On the other hand, noise as an undesired, ever-present phenomenon, limits, for example, the sensitivity of electronic devices and the charge sensitivity of sensors and memory...
The characterization of supra-threshold stochastic resonance (SSR) in which we add noise in an array of N elements, has been discussed. Previous work on SSR was carried out for the calculation of cross correlation co-efficient for uniform signal with uniform distributed noise and Gaussian signal with Gaussian distributed noise. But there is always uncertainty about the distribution of real data. So,...
Although there is a tendency that the opportunity to write by hand is decreasing, handwriting is still one of the everyday activities of our lives. In this study, the experimental system that limits the writing speed of a subject was set up. The aim was to measure the fluctuation time series of a time element obtained from the measurement performed using detrended fluctuation analysis. The result...
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