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The noise mechanisms in graphene and MoS2 are quite different. The noise characteristics of MoS2 transistors could be described by the McWhorter model. The range of the trap densities responsible for the 1/f noise in MoS2 extracted from the noise measurements is from ∼1018 eV−1cm−3 to ∼ 6×1020 eV−1cm−3. The smallest noise level and smallest trap density was found for multilayer MoS2 transistors with...
This paper presents an ultra-wide band, fully balanced, down converting frequency mixer MMIC that was designed for a high dynamic range radar receiver system. The multi-tanh triplet principle is used to achieve high linearity and good noise matching performance. A state of the art 0.13 µm SiGe BiCMOS process is employed for enabling an ultra-wide band operation. The design features minimum double...
Samples containing tunable cross-section gold nanojunctions were fabricated using advanced cleanroom technology. Low-frequency noise spectroscopy was applied to study peculiarities of the noise behavior of bare samples and those modified by organic molecules at low-voltage biases. Normalized noise power spectral density SI/I2 dependencies on the junction resistance (R) were analyzed. Before the break...
Segmentation of the developing insect body is preceded by cell-specific gene expression. In fruit flies (Drosophila), pair-rule genes are expressed in spatial stripes specifying segment fates. Transcription of the even-skipped (eve) pair-rule gene was recently shown to proceed in noisy bursts. Here, we develop a stochastic model of eve transcription from DNA to mRNA. This indicates that eve transcription...
Molecular dynamics simulations is an important tool for understanding the function-structure relationship in biological macro-molecules. To link different time scales in the simulations and consider rare events in macro-molecules, different techniques introducing constant biasing forces are applied. For potassium KscA ion channel the application of standard biased techniques leads to inconsistent...
The spectral feature, especially spectral entropy, of sleep state has been studied in relation to various phenomena. While these studies show the importance of the spectral feature of sleep, their approaches have “Staging” or “Categorizing” process that make the analysis subjective or arbitrary. It is also unsatisfactory that physiological interpretation of the entropies estimated by their methods...
We introduce a self-consistent multi-species kinetic theory based on the structure of the narrow voltage-gated potassium channel. Transition rates depend on a complete energy spectrum with contributions including the dehydration amongst species, interaction with the dipolar charge of the filter and, bulk solution properties. It displays high selectivity between species coexisting with fast conductivity,...
DC, RF and noise parameters of GaAs pHEMTs with 100 nm gate length and widths (μm) of 2×10, 2×15, 2×25, 2×50, 2×75, 4×50 were investigated with the focus on test structure with gate width of 2 × 50 µm. Using a Maury Microwaves ATS system in the 8–50 (K, Ka), 50–75 (V) and 75–110 GHz (W) frequency band, the noise parameters were measured and calculated employing the Y-Factor method. The sources of...
Electron transport and drain current noise in optimized for THz generation wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation which simultaneously solve the Boltzmann transport and pseudo-2D Poisson equations. The drain current and average electron energy under the gate at 300 K is calculated as a function of drain bias. The electron cooling when average electron energy under...
We have investigated the effects of thickness on the electrical properties of Co2% and In1% co-doped ZnO films (CIZO) grown on glass substrates at room temperature by Radio Frequency (RF) magnetron sputtering technique. The sheet resistance Rsh [Ω], the resistivity ρ [Ω.cm], and the 1/f noise have been analysed as a function of thickness from 50 nm to 450 nm. The electrical properties and 1/f fluctuation...
In this work we present the first Low Frequency Noise results obtained on the new 55 nm BiCMOS technology developed by STMicroelectronics. With this improved technology at higher integration level, SiGe:C Heterojunction Bipolar Transistors will address High Speed & High Data Rate communication systems and smart mobility integrated circuits involved in the future fully automated transportation...
AZO thin films were prepared on glass substrate by RF sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ[Ω.cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. Our results show that the resistivity decreases with thickness. The...
New process conditions involving temperature below 900°C, and then compatible with SOI wafers and CMOS technologies, were successfully developed in order to realize atomic flat interface in MOSFETs. The implementation of these processes did not only reduce the variability of electrical performances but also brought the low frequency noise level down, making MOSFETs fabricated on atomically flat surfaces...
We present, for the first time, Low Frequency Noise measurements in Vertical Organic Transistors. Investigated devices are p-type Metal-Base Organic Transistors employing Pentacene and Copper Phthalocyanine as active layers for the Emitter and Collector regions, respectively. The power spectral densities measured at the Base and Collector terminals follow a 1/fγ law, with γ≈1, suggesting that noise...
We present the field-effect-transistor-based THz (TeraFET) detector as a tool for monitoring power and its low-frequency fluctuations of 4.75-THz quantum cascade laser (QCL). The resonant patch antenna coupled TeraFET was implemented in 90 nm CMOS technology. At 4.75 THz, detector exhibits area-normalized minimal noise-equivalent power (NEP) of 370 pW/√Hz and the maximum responsivity of 82 V/W.
Resistivity and low frequency (10 Hz – 20 kHz) noise characteristics of composite materials with multi-walled carbon nanotubes (MWCNTs) have been carried out over wide voltage and temperature (73–380 K) ranges. Composite materials with epoxy-grafted (MWCNT's surface covered by liquid epoxy resin) and amino-grafted (MWCNT's surface covered by polyethylene polyamine) MWCNTs were investigated. Low-frequency...
Robust two-level telegraph conductivity noise in phase separated ferromagnetic insulating manganite La0.86Ca0.14MnO3 has been observed in exceptionally wide temperature range 130 K – 185 K in the low-resistivity metastable state of the system. The switching rate of the telegraphic noise was found not to depend on applied magnetic field and bias current. In contrast, the amplitude of the telegraphic...
A Fluctuation Scaling (FS) law for the output current in Cu interconnects of 30nm line-width is presented. The scaling exponent p is estimated using the method of expanding bins. For an undamaged sample; a power law exponent p ≈ 2 is observed. Damaging the sample by electromigration induced voiding decreases p to values between 1 and 1.5. The p-exponent reflects the stationary distribution of the...
Here we report on the efficient detection of THz radiation generated from Ti:sapphire femtosecond laser system. The large-area interdigitated antenna is excited by optical pulses with pulse duration from 15 to 47 fs. We have tested two AlGaN/GaN HEMT-based THz detectors with integrated broadband antennas. Detectors are comparable in sensitivity but differ in applied parasitic signals elimination techniques...
This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved. It is shown that DC-RTS centers are located near the transfer gate. In particular, it is demonstrated that both gate oxide and Shallow Trench Isolation...
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