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This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved. It is shown that DC-RTS centers are located near the transfer gate. In particular, it is demonstrated that both gate oxide and Shallow Trench Isolation...
A simple as possible random process - a random telegraph signal with independent amplitudes, and underpinned by a point process with inter-arrival times specified by a one sided Cauchy probability density function, is shown to have a 1/f power spectral density. Integral, and statistical, expressions for the number of points in a set interval, and the arrival time of the kth point, are specified. An...
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