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DC, RF and noise parameters of GaAs pHEMTs with 100 nm gate length and widths (μm) of 2×10, 2×15, 2×25, 2×50, 2×75, 4×50 were investigated with the focus on test structure with gate width of 2 × 50 µm. Using a Maury Microwaves ATS system in the 8–50 (K, Ka), 50–75 (V) and 75–110 GHz (W) frequency band, the noise parameters were measured and calculated employing the Y-Factor method. The sources of...
The standard DC and RF and characteristics were measured for the 28 nm p- and n- type MOSFETs. The charge based compact model EKV3 parameters were extracted and verified against measured data. Noise parameters for both n- and p-MOSFETs were measured and analyzed in terms of gate induced noise correlation with the drain current noise, short channel effects related noise. The PRC noise model as well...
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