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Multi-level converters are widely employed in medium voltage grid-connected PV systems, since they feature better power quality and higher conversion efficiency compared with two-level converters. The conventional two-stage PV converter configuration with additional high step-up elements can satisfy the wide input voltage requirements, but results in reduced conversion efficiency and increased cost...
In this paper, a novel common-mode voltage (CMV) elimination scheme is proposed for five-level active neutral-point clamped (5L-ANPC) inverters, which is based on the space vector PWM (SVPWM). The proposed SVPWM scheme utilizes only 19 voltage vectors producing a zero value of CMV among the whole 125 voltage vectors of the 5L-ANPC inverter. This scheme is also able to control all capacitor voltages...
In this paper, a novel ac/dc converter is proposed for low voltage, low power rectification applications. The proposed converter manages the energy harvested from micro-scale electromagnetic transducers. It integrates the conventional Boost and Buck-Boost topologies with a shared inductor, a bidirectional switch and two split filtering capacitors. The Boost and the Buck-Boost topologies function in...
This paper presents a novel integrated dc/dc topology with a step-up output and a step-down output. A new control scheme is developed to regulate both outputs simultaneously. Compared with discrete configurations, the proposed integrated converter utilizes a lower number of switches due to the reuse of components. The converter characteristics are studied comprehensively. It is demonstrated that all...
This paper proposes a single phase T-type inverter operating in boundary conduction mode (BCM). In the past, boundary conduction mode has been widely used to achieve valley voltage switching. In this paper, one switching leg of a full-bridge inverter is replaced by a T-type switching leg to further improve the efficiency. Because the T-type switching leg generates three voltage levels, the voltage...
The switching frequency at which the inverter operates is an important parameter that significantly affects the operation of the inverter. In this paper, a new variable switching frequency algorithm is proposed in which the switching frequency is varied in response to the variation in the operating conditions. The proposed algorithm is based on multi-objective optimization problem formulation such...
Power density and efficiency are important metrics for power converters in many applications including renewable energy interface. Combined with the desire to replace the bulky, unreliable electrolytic dc link capacitors with film or ceramic capacitors due to reliability concerns, this has led to the trend of allowing increasingly higher double line frequency dc link voltage ripple. This paper discusses...
Microinverter is attracting more attention due to its compact size, plug and play concept, easy installation, and higher power yield under partial shading condition. This paper explores a converter for the DC-DC stage of a non-isolated microinverter. The topology termed as extended-duty-ratio (EDR) boost, is a hybrid of the interleaved boost and switched capacitor concept which has the advantage of...
A 1200 V SiC MOSFET switches at much faster rate compared to a Si IGBT. As a consequence, SiC MOSFET experiences comparatively more ringing in device voltage and current due to the presence of parasitic inductance in the converter layout. Therefore, it is not straightforward to retrofit SiC MOSFETs in the converter layout of IGBTs where parasitic inductance appears in the range of 100 nH to 300 nH...
Switching loss is an important and often the dominant source of converter losses. While soft-switching can greatly reduce the impact of switching loss, hard-switching is often preferred due to the simplicity of design, control, and implementation. Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have greatly reduced switching losses due to faster transition...
The 15kV SiC IGBT (2 μm buffer layer) with chip area of 8.4 × 8.4 mm2 is the state of the art high voltage device designed by Cree Inc. This device is expected to increase the power density of converters and the demonstration of the device in applications like Solid State Transformers has been published. Therefore, it is interesting to investigate the performance of the device in very high voltage...
The increasing demand for high power density requires power converter to operate in high switching frequency. SiC power module is regarded as one of the most promising candidates for high-frequency applications due to the superior switching speed and low switching loss. The conventional strategy to optimize switching loss is normally achieved by repetitive double pulse tests, which is time-consuming...
The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special...
This paper presents fast, low loss, and low noise gate driver for Silicon-Carbide (SiC) MOSFETs. We proposed gate boost circuit to reduce switching losses and switching delay time without increasing switching noise. The proposed gate driver makes it possible to improve converters efficiency or enhance power density of converters. SiC power devices have attracted huge interest as next generation power...
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