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GaAs nanowires fabricated by an anodic etching have some advantages over conventional dry crystal growth and wet chemical dissolution techniques in terms of their formation. However, undesired electrical insulating behavior caused by deep interface states is observed. It is known that the interface states originate from the dissociated As atoms between GaAs core and Ga2O3 outer layer. Here, we investigated...
The etching properties of C3F6, C3HF5, C3H2F4, and C3H3F3 were evaluated to investigate the effects of replacement of fluorine atoms to hydrogen atoms in the unsaturated fluorocarbon. Etching rates of SiO2 were decreased, and deposition rates of CFn films on p-Si wafer were increased with increasing the hydrogen atoms in the molecule. XPS spectra show that the contribution of strong C-C bond in the...
We computed the Hydrogen diffusivity and activation energies in bulk amorphous Yttrium Stabilized Zirconia (YSZ), (Y2O3)8(ZrO2)92, using a Molecular Dynamics approach based on reactive forcefields. We found the Hydrogen diffusion activation energy to be approximately twice that in Silicon dioxide at around 0.35 eV, and found the Hydrogen diffusivity to be 2×10−13 cm2/s. We have also calculated the...
Magnesium nanowires with different morphologies have been successfully prepared by means of physical vapor deposition method, and the influence factors on the formation of these magnesium nanowires have been discussed.
We have investigated hydrogenation of graphene using H2 neutral beam for hydrogen storage applications. We have successfully hydrogenated graphene and shown the dependence of the reaction process on the beam energy. In addition, sp3 ratio under several hydrogen beam flux conditions has been estimated from XPS analysis.
Solar-driven photocatalytic water splitting to produce hydrogen (H2) as the future energy has triggered considerable interests. In this paper, we report the growth of ultrathin SnO2 nanosheets (SnO2 NSs) on mesoporous SiC nanofibers (SiC NFs) forming a core-shell hierarchical architecture via a simple hydrothermal method. Without noble metal as co-catalyst, the hydrogen evolution efficiency of SnO...
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with...
In contrast to the reported open-shell zigzag [6]n cyclacenes and short nanotubes (n=5−10), their analogues which contain alternating Ge-C bonds, appear with unstable singlet open-shell (Sos) electronic ground states, at unrestricted broken spin-symmetry B3LYP and BPW91 levels of theory (n=the number of fused benzenoid rings). We have boosted their stability by implementing altering Ge-C bonds that...
Mechanism of a recently reported new etching method of transition metal using ethanol gas and oxygen and argon neutral beams at low temperature was investigated by first-principles calculation based on density functional theory. Tantalum etching was studied. It was found that adsorption of ethanol on both of tantalum oxide and metallic tantalum. Then “hydrogen movement” reaction can occur by argon...
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