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We present the implementation and experimental verification of the first complete digital logic library based on amorphous carbon (a-C)-coated curved-cantilever nanoelectromechanical (NEM) switch technology. Experimental results for sequential gates - latches and edge-triggered D flip-flops (DFF) - and combinational circuits (NAND, AND) are reported for the first time. The capability of the fabricated...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access memory (RRAM) and the optimization of the devices and arrays are addressed and reviewed. The review focuses on our research achievements on the unified physical mechanism, physical-based models including switching and reliability behaviors, and the optimization design issues of the oxide-based RRAM.
Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO3-based resistive switches covering the timescale from <10 ns up to 104 s. The power-dependence of the SET kinetics and the switching energy...
In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (∼ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage...
A novel sharp switching Z2-FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z2-FET DGP is an upgraded version of Z2-FET. It features sharp on-switch, adjustable...
We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current...
The discovery of ferroelectricity in HfO2 and ZrO2 based dielectrics enabled the introduction of these materials in highly scalable non-volatile memory devices. Typical memory cells are using a capacitor or a transistor as the storage device. These scaled devices are sensitive to the local structure of the storage material, here the granularity of the dielectric doped HfO2 layer, varying the local...
A two terminal nanoscale device showing inherent stochastic behavior can be a key enabler for a wide range of applications such as stochastic computing, machine learning and neuromorphic engineering. In this article we investigate the inherent stochasticity associated with two key attributes of phase-change memory devices, namely, threshold switching and memory switching. The physical origin of this...
Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current...
SCM application gives ReRAM opportunity to become mainstream technology, beyond embedded field. Memory reliability improvement and memory/selector co-optimization are still required. To offer better performance/cost trade-off and differentiate from other technologies are necessary for ReRAM to step forward.
Resistive switching memories have been identified as an enabling technology for a variety of emerging computing applications, including neuromorphic and logic-in-memory computing. For example, analog tuning of the memory state combined with high integration density of memristors is needed for very compact implementation of synapses, the most numerous devices in artificial neural networks and would...
Micro/nano-electromechanical resonator based mechanical computing has recently attracted significant attention. However, its full realization has been hindered by the difficulty in realizing complex combinational logics, in which the logic function is constructed by cascading multiple smaller logic blocks. In this work we report an alternative approach for implementation of digital logic core elements,...
While silicon carbide (SiC) is now believed to be a potential replacement to leading horse material silicon (Si) on many power fronts, this paper addresses the merit of SiC material for a diverse range of power applications. Several commercial SiC power modules have been characterized and evaluated under various test conditions and hence strengthening the confidence level of their usage in the field...
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