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The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our simulations that tri-gate AlGaN/GaN HEMTs can exhibit higher breakdown voltages and operate closer to the theoretical limit for GaN devices than their planar...
In this work we demonstrate, for the first time, the advantages of GaN HEMTs on bulk GaN substrates over similarly processed devices on Sapphire and Silicon substrates, intended for power applications, in terms of on-state and off-state operation as well as reliability, where self-heating, off-state leakage, and trapping effects are minimal. MIS-HEMTs with breakdown voltage of ∼670 V and off-state...
AlGaN/GaN nanowire omega-FinFETs have been fabricated and characterized. Tetramethylammonium hydroxide (TMAH) lateral wet etching and atomic layer deposited (ALD) HfO2 sidewall spacer result in very sharp vertical edges and fin widths from 200 nm down to 30 nm. Omega-gate structure exhibits excellent gate controllability and separates the channel from the underlying thick GaN buffer layer, which leads...
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