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Three-dimensional (3D) field-effect transistors (FETs) such as FinFETs and nanowire FETs are device structures for extremely scaled FETs. However, the thermal properties of 3D FETs become worse than those of conventional planar MOSFETs. As a result, an increase in channel temperature during operation, which is called self-heating effects (SHEs) is prominent in nanoscale devices. In this work, 1) SHEs...
Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO3-based resistive switches covering the timescale from <10 ns up to 104 s. The power-dependence of the SET kinetics and the switching energy...
The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope...
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