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In this paper, we report an accurate physics-based compact model for monolayer Graphene Field-Effect Transistors (GFETs) based on the density of states (DOS) of monolayer graphene. The charge-based model computes the total current considering a branch separation between the electron and hole contributions preserving a good accuracy near the Dirac point. The effect of back-gate is included in the charge...
We investigated the transport properties of n+-p-n+ liquid-gated Si NW FET biosensors using noise spectroscopy. We found that the gate coupling effect results in the channel position being shifted into the depth of the nanowire when the back gate voltage is applied. It was shown that the noise level and signal-to-noise ratio depends on the selected operating mode. By applying the back gate voltage,...
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