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This paper presents an analysis of the turn ON transient for SiC power MOSFETs and defines a Temperature Sensitive Electrical Parameter (TSEP) which is suitable for condition monitoring. The drain current switching rate dIDS/dt and its temperature dependency have been measured and analysed for commercially available 1.2 kV/10 A, 1.2 kV/24 A and 1.2 kV/42 A SiC MOSFETs from Wolfspeed showing that at...
A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state base-emitter voltage. Combining this and...
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