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This paper presents the first monolithically integrated two-phase series capacitor buck converter. This converter achieves over 60 A/cm3 current density. The series capacitor buck converter topology enables high frequency (HF) operation up to 5 MHz per phase without special magnetics or compound semiconductors. An adaptive constant on-time controller provides fast load transient response and fixed...
In the multi-MHz low voltage, high current applications, Synchronous Rectification (SR) is strongly needed due to the forward recovery and the high conduction loss of the rectifier diodes. This paper applies the SR technique to a 10-MHz isolated class-Φ2 resonant converter and proposes a self-driven level-shifted Resonant Gate Driver (RGD) for the SR FET. The proposed RGD can reduce the average on-state...
In this work, a Sawyer-Tower circuit is employed to characterize the output capacitance (COSS) of advanced superjunction MOSFETs. It is shown that some of the most advanced superjunction MOSFETs exhibit significant hysteresis in their output capacitance which leads to unrecoverable power loss. This work shows that the conventional impedance analyzer method can only measure COSS accurately when hysteresis...
The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage...
This paper deals with comparative assessment through static and dynamic measurements performed for full SiC-based MOSFET and Si-based IGBT power modules. The full SiC-MOSFET and Si-IGBT based power modules all have an identical voltage rating of 1.7 kV and a current rating of 300 A. Full SiC-MOSFETs presents a lowest on-resistance (RON) of 10.0 mΩ, blocking voltage of 1800 V and a threshold voltage...
In this paper, a novel adaptive synchronous rectification method for digitally controlled LLC converters is proposed. By sensing the synchronous rectifier (SR) body diode forward drop, both the SR turn-on and turn-off edges are optimized for efficiency. Negative current prevention is utilized to improve the system robustness and is enhanced by simple digital control capabilities. Compared with a conventional...
This paper proposes a bidirectional bridgeless totem-pole interleaved power-factor-correction (PFC) converter using SiC MOSFETs as the front-end stage of an onboard charger for plug-in electric vehicles (PEVs). The proposed converter provides bidirectional operation enabling both grid-to-vehicle (G2V) charging and vehicle-to-grid (V2G) ancillary services. The converter is suitable for efficient G2V...
In this paper, an integrated onboard charger architecture is proposed for plug-in electric vehicle (PEV). In this architecture, the phase shift full bridge (PSFB) converter serves as the main high voltage battery charging topology, and the half bridge LLC resonant converter serves as the low voltage battery charging topology. Under light charging mode, the half-bridge LLC is reconfigured to be paralleled...
The efforts on more reliable power conversion systems are gaining momentum in the recent years. Majority of the studies concerning reliability of power switches focus on the package related failures, mainly caused by the thermal stress. The basic failure precursor for this type of stress has been identified as increased on-state resistance for power MOSFETs in recent literature. However, calculation...
This paper shows a gate driver design for 1.7 kV SiC MOSFET module as well a Rogowski-coil based current sensor for effective shortcircuit protection. The design begins with the power architecture selection for better common-mode noise immunity as the driver is subjected to high dv/dt due to the very high switching speed of the SiC MOSFET modules. The selection of the most appropriate gate driver...
SiC MOSFET has low on-state resistance and can work on high switching frequency, high voltage and some other tough conditions with less temperature drift, which could provide the significant improvement of power density in power converters. However, for the bridge circuit in an actual converter, high dv/dt during fast switching transient of one MOSFET will amplify the negative influence of parasitic...
With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors' ability to improve electrical efficiency, they must also be more thermally efficient. In this paper we will evaluate the thermal performance of chip-scale packaged enhancementmode GaN field effect transistors (eGaN® FETs) and compare...
This paper investigates an intelligent and configurable electric power system (EPS) for CubeSats and small satellites built using Silicon and GaN FETs at high switching frequency. The EPS is the power source of CubeSat which harnesses power from solar panels and includes battery charging and multi-domain voltage output regulation within the CubeSat. The electrical power system of a Cube-Satellite...
This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic...
This paper proposes an improved wire-bonded design with a unique double-end sourced (DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to source the power module from the two ends, not only shortens the equivalent power loops but also provides a symmetrical structure for the paralleled devices. The proposed design achieved...
The work presented in this paper focuses on the power flow control and study of three-limb high frequency transformer enabled three port Dual Active Bridge(DAB) converter, using 1200V and 1700V SiC devices. The advantage of using three-limb transformer is given by the low inter-winding parasitic capacitances due to placement of windings on different limbs and elimination of inter-winding insulations...
The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results...
We demonstrate a 900V SiC MOSFET with a record-low ON resistance of 10 mΩ in a TO-247 package. Due to their record low specific ON resistance, and a low Rds,On temperature coefficient, 900V SiC MOSFETs can far exceed the current densities of IGBTs in discrete packages. SiC MOSFETs also have a robust, low reverse recovery body diode which makes them suited to hard-switched and soft-switched topologies...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
Normally-on high-voltage (HV) power transistors are usually operated in a series connection with low-voltage (LV) MOSFETs to ensure safe operation. In the widely used cascode configuration (CC) the status of the combined switch is controlled via the MOSFET gate, whereas the alternative direct drive (DD) method controls the gate of the HV switch directly and utilizes the LV transistor as a safety switch...
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