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This paper presents six different layout designs for MW-level Insulated-Gate Bipolar Transistor (IGBT) modules. The aim is to optimize the normal switching and abnormal short circuit performances of IGBT modules in terms of stray inductance reduction and inductance coupling cancellation. Using the Finite-Element-Method AnSYS Q3D Extractor, electromagnetic simulations are conducted to extract the self...
This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic...
This paper proposes an improved wire-bonded design with a unique double-end sourced (DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to source the power module from the two ends, not only shortens the equivalent power loops but also provides a symmetrical structure for the paralleled devices. The proposed design achieved...
Recently, high efficiency LLC resonant converters have gained popularity to implement battery chargers and employ traditional wire-wound transformers. Due to the height of traditional cores, the form factor of LLC chargers is often plump and bulky. In order to implement slim profile chargers for EVs and portable electronic applications, planar transformers can be used featuring low height, reproducibility,...
This paper focuses on the electromagnetic compatibility (EMC) performance of a Very High Frequency (VHF) converter and how to lower the emissions. To test the EMC performance a VHF converter is implemented with a Class-E inverter and a Class-DE rectifier. The converter is designed to deliver 3 W to a 60 V LED, it has a switching frequency of 37 MHz and achieves an efficiency of 80%. For an LED driver...
This paper presents an improved phase leg power loop design for enhance mode lateral structure Gallium Nitride (GaN) transistors. Static characterization results of a 650V/30A GaN transistor are presented to determine the design parameters of the gate driver circuits. The control of Common Mode (CM) noise current propagation is considered during the gate driver design by optimizing the power distribution...
A novel low-inductance packaging layout for Full-SiC (Silicon Carbide) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Module with split damping capacitors embedding inside is proposed in this paper. The 3-Demision model of the optimized layout was built and analyzed with ANSYS Q3D. The total self-inductance of the single commutation loop is only 6.2nH. Additionally, 55V voltage spike over...
The reliability of power modules is closely depended on their electrical and thermal behavior in operation. As power modules are built to operate more integrated and faster, the electrical parasitic and thermal stress issues become more critical. This paper investigates simplified thermal and parasitic inductance models of SiC power modules. These models can replace the models by Finite Element Methods...
The layout of power modules is one of the key points in power module design. In this paper, along with design examples, an improved automatic layout method for planar power module is presented. Some practical considerations and implementations are introduced in the optimization procedure.
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