The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For high current applications, silicon IGBTs are normally connected in parallel to deliver the required current ratings. The devices are normally designed to have identical electrothermal parameters for equal current and power sharing. However, over the mission profile of the device, non-uniform degradation of the electro-thermal properties like solder delamination or gate contact resistance as well...
Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed,...
The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage...
Suppression of reverse recovery ringing from 3.3kV Si-IGBT SiC Schottky barrier diode hybrid was verified. Reducing loop inductance, consisting of internal module, busbar connection and capacitor, is effective. To realize low inductance within the module and external connection with busbar, the gap between p and n terminal is minimized whilst maintaining the creepage and clearance required by regulation...
This paper presents six different layout designs for MW-level Insulated-Gate Bipolar Transistor (IGBT) modules. The aim is to optimize the normal switching and abnormal short circuit performances of IGBT modules in terms of stray inductance reduction and inductance coupling cancellation. Using the Finite-Element-Method AnSYS Q3D Extractor, electromagnetic simulations are conducted to extract the self...
In this paper, an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic...
During standard robustness evaluations of a NPC type 2 IGBT power module a non-described effect in a Three Level NPC 2 topology was observed. A full description of that effect can help to protect IGBT power modules in this topology against blow ups and can help in a post mortem analysis to understand the reason for this. With a full understanding of that effect the lifetime of the inverter can be...
This paper presents a new power semiconductor IGBT module family dedicated for Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) power-train inverter applications, especially for higher power requirements. The new IGBT module family adopts a 6-in-1 circuit configuration with an optimized internal layout, Direct Lead Bond (DLB) structure and an integrated Al fin for direct liquid cooling. As...
This paper explores the optimization and design of a medium voltage, modular power electronics transformer based on industrial 1.7 kV IGBTs. The design of the medium frequency transformer is outlined. The thermal management using a two-phase, air-cooled thermosyphon is described. The overall performance of one cell is detailed from measurements on a full-scale laboratory demonstrator. From the data,...
Junction temperature monitoring of IGBT modules is crucial for power devices in high power applications. In this paper, a thermo-sensitive electrical parameter based on the maximum collector current falling rate -dIC/dtmax for trench/field-stop IGBT junction temperature extraction is outlined. The inherent monotonic relationship between the maximum collector current falling rate and chip temperature...
Measuring the load current of drive inverters is still inevitable for a precise current control. In common industrial and automotive inverters hall effect based current sensors are widely used. [1] The presented novel current measurement method is based on an inductive current sensor like a Rogowski coil. This can be fabricated much smaller and cheaper than hall based current sensors and can be integrated...
Active neutral-point-clamped (ANPC) converter is a well-known type of multilevel converter which is commercially available in high-power medium-voltage drive market. Since conduction loss investigation is advantageous in design phase of converters, this paper presents an analytical approach to calculate and investigate conduction power loss in ANPC converter. First, rms and average currents of IGBTs...
The 15kV SiC IGBT has second higher dv/dt turn-off slope above the punch-through level resulting in EMI. Increasing gate-resistance also slows the first dv/dt causing increased switching loss. A snubber capacitor assisted turn-off solves these issues for a high power dual active bridge (DAB) converter based on this device, but the light load turn-on ZVS becomes hard to achieve. This paper proposes...
We demonstrate a 900V SiC MOSFET with a record-low ON resistance of 10 mΩ in a TO-247 package. Due to their record low specific ON resistance, and a low Rds,On temperature coefficient, 900V SiC MOSFETs can far exceed the current densities of IGBTs in discrete packages. SiC MOSFETs also have a robust, low reverse recovery body diode which makes them suited to hard-switched and soft-switched topologies...
Reliability of multilevel power converters has received increased attention over the past few years, due to the relatively high component failure probability caused by the large number of switching devices utilized in the converter topologies. Thus, the fault-tolerant operation of multilevel converters plays an essential role in safety-critical industrial applications. This paper introduces an improved...
The integration of series connection of insulated gate bipolar transistors (IGBTs) and multi-level can achieve high voltage converters with low total harmonics distortion (THD). However, due to the transient voltage unbalance, the series connection technology has not been widely applied. Asynchronous gate drive signals, which cause series-connected IGBTs not to turn-on and turn-off at the same time,...
In this paper, two types of new submodule (SM) circuits are proposed for modular multilevel current source converter (MMCSC) with dc fault ride through capability, namely, type I diagonal bridge SM (DBSM) and type II DBSM. The topologies and possible operation states of the two types of DBSMs are presented. Each type of DBSM is capable of providing bipolar voltages in unidirectional current. Replacing...
The flying-capacitor-based multicell converter is one of the well-known breeds of multilevel power converters. This paper proposes a new flying-capacitor-based multilevel converter to minimize the number of flying capacitors (FCs) and power switches. The advantage of the proposed FC-based multilevel converter in comparison with the conventional flying capacitor multicell converter is the fewer number...
A heavy low pass filter is usually applied to an on-die temperature sensor's output to filter out the strong noises during switching transients. Aiming at high bandwidth junction temperature sensing, this paper evaluates the electromagnetic noise coupling of an on-die temperature sensing diode in a high power module. Challenges of fast response on-die temperature sensing are reviewed first. Noise...
This paper presents a digital Active Gate Drive (AGD) methodology for power semiconductor devices. The inherent latency limitation of digital signal processing systems is addressed by a sequential optimization procedure that uses voltage and current signals recorded at the previous switching edge to develop an optimized gate drive waveform for the next switching edge. Experimental results using a...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.