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Wide band-gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer improved performance for power electronic devices compared to traditional Silicon (Si) power semiconductor devices. This paper investigates a 600V GaN & Silicon CoolMOS transistor application in 400W single phase continuous conduction mode (CCM) Boost PFC converter circuits with GaN, SiC and ultrafast silicon...
The paper deals with the evaluation of robustness of high power Silicon Carbide power electronic modules under short circuit conditions. The severity of the tests is usually related to the achievement of the real failure mode which drives the device to withstand a big amount of energy. A short circuit analysis in hard switched fault (HSF) mode at different voltage levels showed a short circuit survivability...
The 15 kV SiC MOSFET and 15 kV SiC IGBT are two state-of-the-art high voltage SiC devices. These high voltage SiC devices enable simple two level converters for medium voltage source converter compared to the complex three level and multilevel topologies with Silicon devices. This paper presents the detailed experimental results for the characterization of 15 kV SiC MOSFET module at 10 kV and 12 kV...
The voltage dependent parasitic capacitances in high voltage semiconductor power devices such as MOSFET, JFET and IGBT play a vital role in the understanding and modeling of the device switching performance. In this paper, a simple but effective parasitic capacitance measurement method is proposed. The output capacitance Coss and the reverse transfer capacitance Crss can be measured simultaneously...
As one of the most attractive post-silicon power semiconductor devices, SiC bipolar junction transistor (BJT) has been studied intensively and commercialized in the past few years. However, SiC BJT has not been widely accepted in the market because of high driver loss in the on-state, which is induced by a relatively large constant base current in order to ensure its fully turning on. In this paper,...
Wireless charging is gaining interest worldwide, mostly driven by electric vehicles (EVs) and consumer electronics. This paper presents the design and implementation of a contactless battery charger for electric vehicles. The power converter is based on SiC MOSFET devices and efficient power topologies, enabling to increase the operating frequency with the aim of minimizing system volume and weight...
Analytical models for hard-switching and soft-switching SiC MOSFETs and their experimental validation are described in this paper. The models include the high frequency parasitic components in the circuit and enable very fast, accurate simulation of the switching behaviour of SiC MOSFET using only datasheet parameters. The much higher switching speed of SiC devices over Si counterparts necessitates...
The temperature and dV/dt dependence of false turn-ON has been analyzed for Silicon Carbide (SiC) Unipolar and Silicon Bipolar transistors, with switching rates varied by the gate resistances while temperature is varied by a hot plate connected to power modules. Self-heating is also investigated by measuring the temperature rise of the modules at high switching frequencies (8 kHz). This has resulted...
With faster switching speed and much lower conduction and switching losses, Silicon-Carbide (SiC) semiconductor devices are nowadays gaining more favor in power converters applications. 1200 V and 1700 V SiC MOSFETs are commercially available, which enables more efficient and compact design of high power rated converters. However, the high di/dt and dv/dt associated with fast switching as well as...
This paper proposes a current source inverter (CSI) with additional Silicon Carbide (SiC) switches and traditional silicon-based inverter bridge. A grid-tied operational principle has been proposed, which can significantly reduce the switching counts and meanwhile realize the zero current switching (ZCS) for the rear-end CSI circuitry. The proposed current source inverter could employ the superior...
This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
Grid connected Electric vehicles (EVs) and Plugin hybrid electric vehicles (PHEVs) can benefit the grid by utilizing Vehicle-to-grid (V2G) technology. V2G enables stored electrical energy in electric vehicle batteries to be returned to the grid for peak demand and other ancillary services. Typically, the onboard electric vehicle battery charger is uni-directional but needs to be bi-directional to...
This paper deals with the performance assessment of different permanent magnet motor drives topologies for Starter/Generator in More Electric Aircraft systems. The comparison is focused on the power electronics part of the system, assuming the possibility to adapt the machine structure to better fit the specific configuration. Simulations performed with Matlab/Simulink and Plexim Plecs will be used...
Cascaded converters are generally used for Medium Voltage (MV) grid connected applications due to the limitation in the voltage rating of available Silicon (Si) power devices. These converters find application in Active Power Filters, STATCOM or as Active Front End Converters for Solid State Transformers at the distribution voltage levels. The wide bandgap semiconductor devices have enabled the grid...
The purpose of this paper is to investigate high-speed machine design enabled through the use of silicon-carbide based power electronic inverters. Silicon carbide based switching devices have superior properties compared to silicon based devices, and they are able to change the paradigm for high-speed machine design. High-speed machines with a higher number of poles are shown to reduce the machine...
Series-connected power switch provides a viable solution to implement high voltage and high frequency converters. By using the commercially available 1200V Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) and Metal Oxide semiconductor Filed-effect Transistor (MOSFET), a 6 kV SiC hybrid power switch concept and its application are demonstrated. To solve the parameter deviation issue in...
This paper reports self-powered, autonomously operated bidirectional solid state circuit breakers (SSCB) with two back-to-back connected normally-on SiC JFETs as the main static switch for DC power systems. The SSCBs detect short circuit faults by sensing the sudden voltage rise between its two power terminals in either direction, and draws power from the fault condition itself to turn and hold off...
This paper studies experimentally the benefits of silicon carbide based power semiconductor technology in a low-voltage grid connected three-phase three-wire pulse width modulated rectifier. The power semiconductor module used in the study is a custom-made 1.2-kV 100-A fully silicon carbide based half-bridge type module designed for fast switching speeds and high temperature operation. The experimental...
Improvements in 900V SiC MOSFET technology have resulted in switches that have extremely low ON resistance in high-speed packages. 900V SiC MOSFETs are promising candidates for hard switched and soft-switched power supply applications due to low ON resistance at higher temperature, a robust low-recovery body diode, avalanche capability and low output stored charge. System designers will be able to...
The 15 kV SiC IGBT with 2 μm and 5 μm field-stop buffer layer thicknesses are two state of the art HV SiC devices. These 15 kV SiC IGBTs generate high dv/dt with two slopes in punch through and non-punch through regions. To design 15 kV SiC IGBT with reduced dv/dt and single slope dv/dt similar to 10–15 kV SiC MOSFET, requires significantly larger drift epitaxial layer thickness and it increases the...
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