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3D sub-system integration of logic and DRAM with TSV is desirable for wide memory bandwidth and reduced power for mobile applications. However, its manufacturing cost, along with testing and heat dissipation, remains to be outstanding issues. A new integration technology platform, InFO, is proposed to address it. In this paper, we compare three main 3D integration architectures: InFO_PoP, FC_PoP and...
Emerging markets such as IoT, M2M, and Big Data analysis will change the game rules of semiconductor industry in 2020. What kind of business models will be required for the players? It is becoming difficult for the Integrated Device Manufacturers (IDM) to make profits simply by fabricating devices. Not only the hardware, but services or solutions becomes more and more important. On the other hand,...
We present, for the first time, a holistic data-path driven transistor-interconnect co-optimization method, which systematically isolates the logic-gate and interconnect-wire dominated data-paths in block-level delay-bins (i.e., sub-binning of delay based bins) to significantly improve accuracy of static and dynamic power estimation. It captures the critical interdependence of transistor architecture...
We have fabricated LG=90nm high-K dielectric enhancement-mode (e-mode) GaN MOS-HEMT which shows low IOFF=70nA/µm (VD=3.5V, VG=0V), low RON=490Ω-µm, high ID,max=1.4mA/µm, and excellent power-added efficiency (PAE) of 80% at RF output power density (RF Pout) of 0.55W/mm (VD=3.5V, f=2.0GHz). These results represent (i) >3.6X lower RON at equivalent breakdown voltage (BVD) than industry-standard Si...
Internet and mobile application have been the driving force for semiconductor innovation in the past 10 years. In this paper, we will focus on the system requirement for today's and tomorrow's consumer gadgets from productivity laptop computers to wearable glasses or watches. We will start with everyone's favorite activity such as taking pictures and sharing with friends, listening to the YouTube...
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