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We introduce a novel programming algorithm that is particularly suitable for 3D NAND. With larger design rules and charge trapping (CT) device 3D NAND is much less sensitive to interference therefore should not use elaborate and costly algorithms designed for scaled 2D NAND. By binary division of cell Vt into smaller groups the number of verification pulses can be reduced. For MLC/TLC which requires...
Retention characteristics of a 3-D NAND flash cell with tube-type poly-Si body are investigated at a high temperature (T) depending on program (P), neutral (N), and erase (E) states of adjacent cells. The trap density (Nt) in the nitride storage layer of the cell is extracted by utilizing retention model and deriving related equations in cylindrical coordinate. By programming or erasing adjacent cells,...
Endurance in filamentary RRAM is modeled in the framework of the hourglass model. Two failure modes are distinguished: (i) stochastic set failure is caused by defect generation near the bottom electrode, and (ii) resistive window changes are controlled by T-activated changes of the number of filament vacancies. Bottom electrode/oxide interface optimization is the prime knob for endurance improvement...
We have shown a practical device design guideline for sub-0.2V ultra-low power, steep slope ferroelectric FET using negative capacitance (NC) focusing on operation speed, material requirement, and energy efficiency for the first time. The operation speed is determined by finite switching time of ferroelectric polarization. For low supply voltage and hysteresis-free design, there exists a ferroelectric...
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