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Aligned square arrays of black silicon (b-Si) on top of pillars were fabricated on p-type silicon substrate by a deep-etching step combined with a b-Si process. Two 10×10 arrays with pillar heights of 8 µm and 20 µm and one b-Si reference sample without pillars were investigated. Integral field emission (FE) measurements of the arrays yielded rather low onset-fields between 6.4 V/µm and 13.5 V/µm...
An in-place synthesis process for nanowires is used to fabricate a customized field emitter array for the use as a non-thermal electron source in an ionization gauge. The fabrication was further expanded to metallic nanocones with a density of 1.6 × 106 cm−2 using optimized deposition of the cones on predefined electrodes. This method can make the wide area of the predefined electrodes enclosed with...
Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission...
The electrostatic-focusing Spindt-type field emitter array (FEA) pitch was optimized for an FEA-high-gain avalanche rushing amorphous photoconductor (HARP) image sensor. Simulation results showed that a narrow FEA pitch of less than 2.2 µm deteriorates the electrostatic focusing effect.
A research project on the development of radiation tolerant compact image sensor with a field emitter array started in 2013. The purpose of the project is to develop key components of the image sensor that has sufficiently high radiation tolerance, as a step to investigate the interior of the nuclear reactor of Nuclear Power Plant Fukushima the 1st. A volcano-structured double-gated Spindt-type field...
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