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This work addresses tunable matching networks fabricated on functional thick film layers of Barium-Strontium-Titanate (BST) for RF-power transistors. The deposition of BST layers is performed in a screen-printing process and the fabricated components are patterned by photolithography. Around 2.0 GHz, the insertion loss varies in a range between 0.7 dB and 1.1 dB depending on the tuning state and frequency,...
For generation of non-Foster circuit elements with negative capacitance or negative inductance, this paper newly proposes a negative impedance converter (NIC) with an emitter follower circuit. The principle of the proposed circuit topology is introduced, and then, the negative capacitance with −100 pF is demonstrated by using bipolar transistors 2SC1815GR with hFE of 283. The results indicate that...
A large-signal model for 120W high power packaged pre-matched transistor utilizing TriQuint's TQGaN25HV HEMT technology is presented. It is composed of an array of unit-cell nonlinear EEHEMT models representing the high power GaN transistor die and EM based models for the input/output pre-matching circuits relaying the transistor die pads to the package leads. This model offers accurate small-signal...
This paper will report a 100W, 100MHz to 1GHz GaN amplifier module having a minimum efficiency of 48% across the whole band with a minimum gain of 14dB. This is believed to be the highest power/efficiency combination yet reported for this frequency range.
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