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A V-Band solid-state power amplifier/combiner is demonstrated in this paper. 8-way radial-line power combiner/divider and microstrip-to-waveguide transitions are proposed and designed. The insert losses of the passive combiner/divider is 2.6 dB as tested in back-to-back configuration, which indicates about 0.3 dB insert loss of the combine/divider network, and exhibits a combining efficiency of 93%...
Devices fabricated through TSMC 0.18 micron CMOS process are modeled and implemented in Agilent ADS for the circuit designs. Two low-noise, well impedance-matched radio frequency amplifiers working at various nearby center working frequencies, 2.6 GHz and 2.8 GHz, are proposed using Class-E power amplifier mechanism. Both are deliberately put in series such that both can couple with each other, The...
Microwave power transmission is one of the key technologies to realize solar power satellite. In this paper, the authors design a high efficiency GaN Class-F power amplifier at 2.45GHz. Power added efficiency is up to 78.8% and output power is 40.3dBm in simulation. Simulated results predict high performance of the proposed PA.
An envelope tracking power amplifier (ET PA) using a standard CMOS process for the 3GPP long-term evolution mobile terminals is presented. An efficiency of the CMOS power amplifier for the modulated signals can be improved combining with a highly efficient and wideband CMOS bias modulator. The CMOS PA has a two-stage differential common-source structure for high gain and large voltage swing. The bias...
This paper describes the development of wideband transmitter for LTE system. The wideband transmitter can work from 400MHz to 6GHz with high output power dynamic range. The wideband transmitter was designed and processed. The measured results show that the wideband transmitter has a high performance for the LTE system.
This paper presents the methods to improve load modulation in Doherty along with two modified GaN Doherty power amplifiers (PAs) with high efficiency and linearity at large back-off power for 100 MHz LTE-advanced application. To improve load modulation, the peaking amplifier is designed to achieve similar output current with that of the carrier amplifier by choosing optimal load impedances in class...
A 11W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 um T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5dBm and peak power-added-efficiency of 20% were measured at 29GHz with...
In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted...
This paper describes a modeling method of the nonlinear response of receiver amplifiers based on high-order polynomials, using measured data of the amplifier 1dB compression point and the third-order intercept point to calculate the high-order polynomial coefficients. With the coefficients, a nonlinear disturbance response model is built for the amplifier. The model is then used in the research for...
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