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We developed a new technology for the Fuji 4th generation power module for hybrid vehicle application. It achieved a 30-% volume reduction, and a 33-% weight reduction compared to the 3rd generation. Requirement trends for the power module for hybrid vehicles are high energy-efficient, downsizing, lightweight and higher reliability. To achieve these requirements, IGBT module needs low thermal resistance...
Energy storage can be used to suppress the power fluctuations in wind power systems, and thereby reduce the thermal excursion and improve the reliability. Since the cost of the energy storage in large power application is high, it is crucial to have a better understanding of the relationship between the size of the energy storage and the reliability benefit it can generate. Therefore, a reliability-oriented...
Recent advances of GaN Gate Injection Transistors (GITs) and their applications to power switching systems are reviewed. The GITs are fabricated on cost effective Si substrates in a large diameter up tp 6inch, which exhibit normally-off operations by the use of p-AlGaN over an AlGaN/GaN hetero-junction. The GIT is free from the current collapse up to 600V enabling reliable operation of the power switching...
Volume and weight of the propulsion equipment of a traction drive are most important features to provide more efficient transportation in the future. It will be shown how the converter technology for traction drives has improved its performance in the past decades and new developments are presented promising a further increase in power density. The machine and corresponding gear and suspension system...
We proposed a stacking structure of nanocrystalline diamond (NCD) and microcrystalline diamond (MCD) films for an insulating material of silicon-on-insulator (SOI) substrate. NCD was deposited on Si wafer substrates by surface wave plasma CVD and then MCD was deposited on as-grown NCD surface. The break down field of the stacking structure was three times higher than that of MCD layers. The thermal...
To improve the insulation reliability of insulated metal substrates for power modules, we propose an insulated metal substrate that has a porous alumina anodic oxide film along the interface between an aluminum base and resin insulating layer. By having two anodic oxide films, i.e., inorganic and organic acids, compared with conventional substrates, the proposed substrate improves the adhesiveness...
Super -junction MOSFETs and shielded gate trench MOSFETs are widely used especially for PFC and DC-DC converters for networking and computing power supply systems that require high efficiency and power density. With smaller parasitic capacitances, the latest SJ MOSFETs have extremely fast switching characteristics and therefore reduced switching losses. But, naturally this switching behavior leads...
Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV level n-channel IGBT with a low differential specific on-resistance (Rdiff,on). Moreover, the results reveal that the nano-tech resin, improved resin and...
A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-thermo-mechanical strain and stress affecting the switch during both manufacturing and operation: structural simulations were carried out to identify the...
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