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The present silicon based devises such as IGBT and MOSFET operate at low switching frequencies of about 40 kHz and 100 kHz respectively. This means that we need to have some other new device that can switch in the range of MHz and which is more efficient than the silicon based devices. As for as high speed devices are concerned, we have SiC and GaN devices. Although SiC is an efficient and matured...
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