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LLC Resonant converters have been popular in recent years by providing highly-efficient, compact isolated power conversion for numerous applications. 48V to 12V and 400V to 12V step-down isolated converters are often required in server, telecom and automotive applications. While the switching losses in LLC converters are eliminated due to zero-voltage switching, the primary-side switch output capacitance...
A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is...
This paper presents the design, prototype development, operation and testing of a 1 kW, 800 V output all-SiC boost DC-DC converter using SiC MOSFET and SiC Shottky diode chips. The switching frequency is raised up to as high as 800 kHz and a 230 °C junction temperature has been reached by switching-loss dominant self-heating. High frequency switching characteristics of the proposed converter are evaluated...
This paper describes the application of SPICE models that have been developed for very high power GaN transistors and their integrated drive circuitry. GaN devices that are expected to be used in automotive applications are required to operate at high temperatures and provide very high current operation. The characteristics of drive circuitry must be simulated along with the very large GaN devices...
It is well known that that source inductance could significantly increase turn-on and turn-off time, and therefore increase switching power loss. Also, it is well understood that switching loop inductance could reduce voltage stress during turn-on and increase voltage stress during turn-off. In this paper, a new inductive switching loss model that includes source inductance and switching loop inductance...
Thermal performance is a major design consideration for power electronics systems. Power semiconductor devices are temperature limited and to satisfy application reliability considerations it is necessary to limit the junction temperature during operation through design. Hence it is desirable to have a procedure that can accurately calculate the temperature distribution of the system under actual...
The information of junction temperature is crucial for operation management of IGBT modules. In practice, junction temperature is typically estimated by using an electrothermal model. IGBT modules are subject to various aging processes during operation, some of which, e.g. substrate solder crack, changes the thermal impedance of an IGBT module. However, in the literature little work has included the...
This paper presents the design and optimization of MEMS-microfabricated toroidal inductors targeted for use in integrated power electronics. The process is based on MonteCarlo inductor synthesis, performance evaluation based on analytic inductor models and circuit simulation, and Pareto-optimal filtering. The models and simulation are verified through comparison with magnetic finite element analysis...
This paper presents double-sided nickel-tin transient liquid phase (Ni-Sn TLP) bonding technology and its application to double-sided cooling structures used in automotive power modules. Double-sided cooling is an emerging solution for heat dissipation problems inside compact power modules (used in electrified vehicles) and requires components providing highlevel reliability. This requirement is satisfied...
For retrofit applications, some high-brightness (HB) light-emitting diode (LED) products have the same form factor restrictions as existing light bulbs. Such form factor constraints may restrict the design and optimal performance of the LED technology. In this paper, some critical design issues for a commercial LED bulb designed for replacing an E27 incandescent lamp are quantitatively analyzed. The...
This paper discusses the design of a multichip Gallium-Nitride (GaN) power module for high frequency power conversion. The module is designed with HRL 600 V GalliumNitride (GaN) enhancement mode HEMT device. To exploit the capability of fast switching with low loss from high voltage GaN devices, different layout structures have been analyzed to reduce power loop parasitic inductance and improve switching...
This paper analyzes the widely used 45 degrees thermal spreading model in IGBT package design and quantifies error in application to both single and multilayered package structures. The results are compared with finite element analysis (FEA). For single-layer heat transfer problem, the spreading angle model with a 45 degrees assumption provides a less than 20% conservative error of thermal resistance...
This paper introduces the detrimental effects of voltage regulator noise on ΔVBE-based temperature sense circuits. The work began when a significant temperature reporting inaccuracy was observed on a commercial DC-DC power conversion module. In the paper, the observed problem will be discussed, and a Spice model presented which allows the issue to be simulated. The main part of the work, however,...
There is a current movement within the scientific, engineering, educational and entrepreneurial communities called “making.” Most electronics makers are familiar with hardware offerings Arduino™ and Xbee™, which are user friendly rapid prototyping platforms for microcontrollers and wireless networks respectively; however an equivalent solution for power electronics is not available at comparable cost...
In this paper, the common mode (CM) EMI noise characteristic of three popular topologies of resonant converter (LLC, CLL and LCL) is analyzed. The comparison of their EMI performance is provided. A state-of-art LLC resonant converter with matrix transformer is used as an example to further illustrate the CM noise problem of resonant converters. The CM noise model of LLC resonant converter is provided...
This paper presents the design of an on-chip integrated power management architecture with Maximum Power Point Tracking (MPPT) for Photovoltaic (PV) solar system. The system is developed in order to extract higher power for PV system under partial shading and other mismatching conditions. The MPPT circuit is implemented in 0.35μm Complementary Metal-Oxide-Semiconductor (CMOS) technology. The on-chip...
In this paper, the stability issues of multi-module DC distributed power system are studied. Physical understanding of terminal characteristics of each module is studied. All the modules are divided into two groups (Z type and Y type) based on the different terminal property type and different equivalent circuit is selected for each group. Equivalent circuits of total system are established to analyze...
Indirect matrix converters (IMCs) inherently provide more opportunity for higher power per volume densities than traditional back-to-back converters (BBCs). The use of new wide bandgap power semiconductor devices, like those based on silicon carbide (SiC), for different power converter applications is becoming more prevalent due to advantages realized at the system level when compared to conventional...
In this paper a generalized multi-phase space vector theory is considered for developing the space vector modulation of a three-phase to seven-phase direct matrix converter (DMC). The modulation is based on the control of the voltage vectors in the first d-q plane, while imposing the remaining voltage vectors in the second and the third planes (x1–y1, x2–y2) zero. The duty cycles of the bidirectional...
Cell capacitor energy control of a Modular Multilevel Converter (MMC) is conventionally done by controlling leg current and modulation strategy. In most of literatures, leg current transient is analyzed under an assumption that the DC bus is a stiff DC voltage source. In a real MMC-based HVDC transmission system, however, there's no such virtual stiff DC voltage source and the conventional regulation...
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