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An adaptive secondary-side digital control is proposed for the series resonant converter to solve the loss of ZVS under certain input and load conditions, making it a good candidate for MHz 48V voltage regulators (VRs). By means of varying AC equivalent resistance, the output voltage regulation is achieved by controlling the duty cycle of the synchronous MOSFET. An additional control variable has...
This paper presents the analysis of the mechanism of failure modes in bi-directional phase-shift full-bridge converters, composed of MOSFET, based on the circuit operation and parameters considering parasitic components of MOSFET. In addition, the relation between circuit operation and parameters are suggested through the experimental comparison. Using the relation, the suitable ranges of parameters...
This paper presents a guide on characterizing state-of-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse tester (DPT) with a very low intrusive current measurement method, which enables reaching the switching speed limits of these devices. Due to the...
This paper presents a general method to measure the output capacitance (Coss) related energy loss per switching cycle in power MOSFETs used in zero-voltage-switched (ZVS) applications. It is shown that a simple model using Coss in series with a resistance Ross is inadequate for describing the observed energy loss and a different model is needed. This work also shows that the traditional hard-switched...
This paper analyzes a high efficient SiC MOSFET based inverter without externally antipa-rallelled diodes. To this end, steady-state performances of MOSFET channel and its body diode are demonstrated; proper control and modulation technique is applied to realize synchronous rectification of the inverter and to minimize the conduction loss of body diodes. Power loss analysis of the inverter under various...
This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The high-voltage cascode GaN HEMT in traditional package has high turn-on loss in hard-switching turn-on condition, and severe internal parasitic ringing, which could possibly damage the gate of GaN HEMT, in hard-switching turn-off condition, due to package...
The emergence of gallium nitride (GaN) based power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with aging silicon (Si) power MOSFETs. In this paper, we will evaluate the ability of gallium nitride transistors to improve efficiency and output power density in high frequency resonant and soft-switching applications. To experimentally verify...
This paper presents the design, prototype development, operation and testing of a 1 kW, 800 V output all-SiC boost DC-DC converter using SiC MOSFET and SiC Shottky diode chips. The switching frequency is raised up to as high as 800 kHz and a 230 °C junction temperature has been reached by switching-loss dominant self-heating. High frequency switching characteristics of the proposed converter are evaluated...
This paper describes the application of SPICE models that have been developed for very high power GaN transistors and their integrated drive circuitry. GaN devices that are expected to be used in automotive applications are required to operate at high temperatures and provide very high current operation. The characteristics of drive circuitry must be simulated along with the very large GaN devices...
A soft-switching full-bridge converter (FBC) with dual-phase-shift control strategy is proposed for high efficiency conversion in wide voltage range applications. The proposed FBC can be operated either in step-up mode or step-down mode. Secondary-side phase-shift control is employed for the step-up mode, while primary-side phase-shift control is adopted for the step-down mode. Zero-voltage-switching...
Conventional AC-DC driver circuits for Light-Emitting Diode (LED) lamps require large output capacitance across the LED load to minimize the low frequency current ripple. This large capacitance is usually achieved by using an electrolytic capacitor, which has a lifetime that is at least two times less than that of a LED device. To match the potential lifetime of the LEDs, a new isolated single switch...
This paper presents the first, off chip, class DE (resonant half bridge) converter working in the Very High Frequency (VHF) range. The benefits of using half bridge circuits both in the inverter and rectifier part of a VHF resonant dc/dc converter are analyzed and design equations for all components in the power stage are given. The circuit has been simulated to verify the accuracy of the presented...
A new isolated push-pull very high frequency (VHF) resonant DC-DC converter is proposed. The primary side of the converter is a push-pull topology derived from the Class EF2 inverter. The secondary side is a class E based low dv/dt full-wave rectifier. A two-channel multi-stage resonant gate driver is applied to provide two complementary drive signals. The advantages of the converter are as follows:...
Current unbalance in paralleled power electronic devices can affect the performance and reliability of them. In this paper, the factors causing current unbalance in parallel connected silicon carbide (SiC) MOSFETs are analyzed, and the threshold mismatch is identified as the major factor. Then the distribution and temperature dependence of SiC MOSFETs' threshold voltage are studied experimentally...
There is little work done to study the nuances related to paralleling the higher speed SiC Mosfet devices when compared to Si devices. This paper deals with the parallel operation of packaged silicon carbide (SiC) MOSFETs. The parameters that affect the static and dynamic current sharing behavior of the devices have been studied. We also investigate the sensitivity of those parameters to the junction...
Gallium nitride (GaN) based power devices are becoming common place due to their ability to achieve higher efficiencies and higher switching frequencies than is possible with silicon (Si) power MOSFETs. With discrete eGaN® FETs capable of switching at slew rates beyond 40V/ns, the system performance is greatly impacted by aspects outside the power devices, such as high speed gate drivers and printed...
Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized...
In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher...
Wide band-gap semiconductors (WBG) have recently drawn a lot of interest as main switches for power conversion processes. Owing to their inherent properties, materials such as Silicon Carbide (SiC) offer some advantages over silicon in the 1200V voltage range representing a solution to the quest for increased power density, safer thermal operation, better efficiency and reduced system form factor...
In this paper, a comprehensive efficiency evaluation of several single-phase bridgeless Power Factor Correction (PFC) boost rectifier topologies is conducted. Both two-level and three-level bridgeless PFC boost rectifier topologies are considered; including paralleled and interleaved variants of each. To improve efficiency, a three-level bridgeless PFC boost rectifier with an AC switch is proposed...
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