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We report a directly modulated 850nm VCSEL-based Optical link operating at 55Gb/s. This is the highest modulation rate for VCSEL-based link of any wavelength.
We describe a dual-frequency dual-polarization class-A vertical external-cavity semiconductor laser delivering a tunable optically-carried microwave signal with an additive phase noise below −120 dBc/Hz at 10 kHz.
We report on a bidirectional system in which VCSELs are simultaneously modulated with two uncompressed HD video signals. The results show a large power budget and a negligible penalty over 10 km long transmission links.
Self-organized quantum dots (QDs) applied to light-emitting devices extend their spectral range, temperature stability and allow new approaches including single photon emitters and multi-wavelength lasers and light-emitting diodes.
We are presenting an overview of InP and GaSb based VCSEL devices in the long-wavelength range. Device structures and performances regarding high-power, tunability and high-speed are discussed by focusing on telecommunication, safety and medical applications.
1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems.
We demonstrate ultra-compact intra-cavity contacts fabricated with an embedded Al2O3 etch-stop, which effectively shorten the cavity length and enhance the output power of a multi-terminal VCSEL.
Cold-cavity spectral characteristics are used to extract the size dependent optical loss for small diameter oxide-confined VCSELs. For aperture diameters ≤ 2 µm, the oxide scattering loss can be as large as 10 cm−1.
Using a coherent optical demodulation technique, we have independently measured the AM and PM resulting from current modulation at GHz rates of an I.L. VCSEL at 1.55 µm. The variation of the depth of AM and PM are measured as function of RF modulation frequency and power. Two regimes of modulation for the I.L. VCSEL are explored: 1) At low frequencies < 10 MHz where thermal modulation dominates...
A low-power CMOS-driven VCSEL-based link using a 2-tap feed-forward equalizer in the transmitter is reported at 850-nm wavelengths. Power efficiencies of 1.5, 2.0, and 3.8 pJ/b are achieved at 22.5, 25, and 28.5 Gb/s, respectively.
We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High-speed 25 Gbps operation is also demonstrated.
The noise characteristics of an injection-locked VCSEL are experimentally investigated. Effects of injection-ratio and detuning on the phase noise added by an injection-locked VCSEL are studied.
Vertical cavity surface emitting lasers (VCSELs) are important light sources for communication and sensing applications. The materials used for fabricating VCSEL emitting at 650–1000 nm are typically limited to GaAs-based compounds. Increasingly III–V semiconductor photonic devices have been bonded to Si [1] and other substrates [2]. To extend the applications of VCSELs, we demonstrate a bonding approach...
Electronically steerable laser sources have applications in areas such as optical display, free space communications, and illumination. Among the multiple figures of merit for beam steering, speed is still a limiting factor for many applications including laser radar [1]. While mechanical methods clearly have inertial limitations, even the fastest available liquid crystal optical phased array techniques...
We demonstrate on-chip beam steering based on a slow-light Bragg reflector waveguide laterally integrated with VCSEL. Electro-thermal tuning of the slow-light waveguide enables continuous beam steering over 9° with a diffraction-limited divergence angle of 2.2°.
We report on the polarization dynamics in VCSELs with a small frequency modulation. The polarization state of a VCSEL is shown to be controlled by only changing the frequency of the modulation to electrical injection.
Vertical-cavity surface-emitting lasers (VCSELs) have achieved remarkable performance in threshold, speed, and efficiency. However the VCSELs have so far achieved their performance without the benefit of a buried-heterostructure (BH) gain structure. A high quality BH gain structure can be expected to dramatically improve VCSEL performance by eliminating parasitic charging effects in the perimeter...
We report a novel approach based upon Vertical Cavity Surface Emitting Lasers (VCSELs) to reproduce a wide range of dynamics observed in biological neurons on a much faster time scale.
In this paper, we show recent results in the use of injection locked vertical cavity semiconductor lasers (VCSELs) as novel modulators and narrowband optical filters that can be exploited for applications relevant to microwave photonics. Specifically, we exploit the phase modulation that is imparted onto the injection locked signal by modulating the current to the VCSEL. Optical filtering is realized...
This paper presents an experimental demonstration of VCSEL-based PON with simplified real-time coherent receiver at 2.5 Gbps. Receiver sensitivity of −37 dBm is achieved proving splitting ratio up to 2048 after 17 km fiber transmission.
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