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We present our design and characterization on SPADs and NFADs with InGaAs/GaAsSb Type II SL absorber regions on InP substrates with extended wavelength detection up to 2.4µm wavelengths for single photon counting applications. Packaged devices showed very low variation at −40oC, with ∼100nA dark current at 2 volts below breakdown voltage. The measured DCR was 106 Hz at 2 volts excess bias at 223K.
1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems.
This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode.
We report on hybrid III–V on Silicon lasers with adiabatic coupling. Fabry-Pérot laser with 16mW output power, integrated racetrack laser and photodetector, as well as widely tunable laser with 45nm tuning range are presented.
Guided-mode resonance sensors employing modal-polarization diversity are presented. In an application example, we quantify the variations in the refractive index of an attaching biolayer and show that the background is stable.
Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies [1]. Consider a bar pattern with a cross-section of each bar being a sine wave. Since the image of a sine wave light distribution is always a sine wave, the image is always a sine wave...
Vertical-cavity surface-emitting lasers (VCSELs) have achieved remarkable performance in threshold, speed, and efficiency. However the VCSELs have so far achieved their performance without the benefit of a buried-heterostructure (BH) gain structure. A high quality BH gain structure can be expected to dramatically improve VCSEL performance by eliminating parasitic charging effects in the perimeter...
This paper reports the high light extraction efficiency will be obtained by considering the systematic design of two-dimensional sub-wavelength photonic crystals, which is created on the p-side of InGaN-based light emitting diodes.
We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.
We demonstrate an ultra-compact resonance-based integrated photonic sensor for the detection of multiple gas analytes (VOCs) with high sensitivity. Differential measurements using on-chip references are used to compensate for environmental effects to achieve high accuracy.
We describe the fabrication of a double-layer silicon photonic crystal using self-aligned CMOS-compatible processes and its assembly on a single mode fiber using a wafer template and epoxy bonding. The fiber sensor has sharper resonances and higher temperature sensitivity than the previously-reported single-layer sensor. The new assembly method facilitates batch-production of the sensor and allows...
We demonstrate the p-doping influence on number of dots explained by comparison with structures has different quantity of material deposited. Peak modal gain at high temperatures is higher in p-doped structure compare to undoped one.
A highly temperature sensitive directional coupler is demonstrated experimentally by selectively filling nematic liquid crystal into a single void of the photonic crystal fiber. The temperature response of the device exhibits good linearity.
We demonstrate a single silicon microring resonator Mach-Zehnder modulator driven by thermo-optic effect. The proposed modulator was fabricated using CMOS process. The modulation characteristics show that the power consumption can be reduced to one fifteenth.
We report on the direct epitaxial growth of InAs quantum dot based laser structures on silicon substrates. Multiple layers of InAs quantum dots serve as the gain region in a III/V broad area laser structure heteroepitaxially grown on silicon. Aspects of the heteroepitaxy and quantum dot growth are examined.
In recent years, GeSn and SiGeSn alloys have been widely studied, because of their potential optical properties as well as their compatibility with Si technology. GeSn alloys become direct bandgap materials with about 6–7% Sn1−2, thus a promising candidate as a laser gain material. SiGeSn alloys provide independent control of lattice constant and band structure3−4, which makes them ideal candidates...
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