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This paper introduces a novel surface passivation using Si3N4 (20-nm)/Al2O3 (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc and RF performances in InP-based HEMTs. Notably different from the conventional Si3N4 approach, an ultrathin layer of Al2O3 (15-nm) grown by atomic layer deposition is incorporated in the surface...
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