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Silica microspheres were made by melting the tip of a standard telecom fiber. They were coated using a dip coating apparatus with a 70% SiO2 - 30 HfO2 sol-gel derived glass activated by 0.3 % mol of Er3+. The whispering gallery modes of the coated resonator were studied using a full taper - microsphere coupling setup. Upon excitation at 1480 nm sharp peaks in the wavelength range from 1540–1565 nm...
This paper describes the methodology for the automated synthesis flow used for a high-performance microprocessor project at Intel. The flow presents a standard method of automatically translating the RTL description of the microprocessor to placed and routed gates. The flow optimizes the design for timing and power, while ensuring that the final netlist is logically equivalent to the RTL and that...
Porous silicon (PSI) samples were prepared by electrochemical etching of n-type (111) epitaxialy grown silicon layer on n-type silicon (111) substrates, by varying the concentration of 48% HF in ethanol solution, and by varying the etching time. Electrical resistivity of epitaxial layer was ∼2 Ω cm and of silicon substrate was ∼ 0.015 Ω cm. Within the epitaxial layer, and on the substrate surface,...
Luminescent porous silicon (PS) was obtained by galvanostatic electrochemical anodisation of p-type polycrystalline silicon (poly-Si) film in aqueous hydrofluoric acid (HF)/ethanol electrolyte. Poly-Si film was prepared and boron delta-doped on n-type silicon wafers by low pressure chemical vapor deposition (LPCVD) process. Porous poly-Si surface morphology varied as a function of anodisation time...
We present an interim report on the investigations of the TaxN thin films deposited on the (100) Si wafers coated with a 140-nm thermal SiO2 layer. Our conclusions are based on the room temperature sheet resistance measurements, transport properties measurements from helium up to room temperature and on the Raman spectra analysis of the investigated series. In particular, we discuss a nonmonotonous...
Even in the metallic regime, heavily doped polycrystalline silicon has high thermopower, but since recently, due its high resistivity combined with high thermal conductivity, silicon was not considered as a possible thermoelectric material. However, various reasons have encouraged investigations on polycrystalline silicon in order to enhance its TE properties. We discuss these reasons and give a short...
Visible photoluminescence (PL) was observed in binary g-As2S3, technologically modified g-GeS2(TiVj) and ternary glasses along (As2S3)x(GeS2)1−x line. PL maximum in g-As2S3 at 2.43 eV was assigned to band-to-band transitions and its position is in good agreement with value of optical band-gap edge absorption (Eo=2.4 eV). It is suggested that the peak at 2.2–2.3 eV in g-GeS2(TiVj) and GeS2-based ternary...
The variation of the current as function of deformation in the multi-layered graphene films located on the flexible PET-substrate was researched. The current depends on deformation linearly. The gauge factor of the flexible films was calculated. Effect of temperature on conductivity of graphene samples was investigated.
The electronic structures of bulk and single layers dichalcogenides MoX2 (X = S, Se, Te) were studied by quantum chemistry method of electron localization function (ELF). Three-center interaction between the molybdenum atoms in the layers was found. The nature of this interaction depends on the type of chalcogen X, similar interaction is weaker for MoTe2. The observed effect supposes that observed...
Experimental data of mean values of breakdown voltage ̅Ub of CITEL and SIEMENS gas-filled surge arresters (GFSA) obtained for voltage increase rates k=1−10 V/s with discretyzed dynamic method are presented in the paper. It has been shown that ̅Ub = f(k) data are fitted very well by a straight line. The values of static breakdown voltage, which have been found at the intersection of the fitted line...
Gamma-ray irradiation and post irradiation response at room and elevated temperature have been studied for RADFETs with gate oxide thickness of 100 nm with gate polarization during irradiation of 5 V as well as for RADFETs with gate oxide thickness of 400 nm with gate polarization of 0, 2.5 and 5 V. The response was observed on the basis of threshold voltage shift, ΔVT. Approximately linear dependence...
Diodes fabricated by a pure amorphous boron (PureB) deposition technology show outstanding performance. Depositing a PureB-layer on Si at temperatures from 500 – 700°C creates an effective p+-layer at the interface and ultrashallow p+n-junctions less than 10 nm deep can be made. The PureB layer can also be used as an emitter region in pnp bipolar transistors having a high effective emitter Gummel...
Photovoltaic properties of nanocrystalline (nc-Si:H) heterojunction thin film solar cells with the single junction structure of TCO/p- nc-Si:H/i1- nc-Si:H/i2- a-Si:H/n- nc-Si:H/AZO was studied by a computer modeling software AMPS-1D in this paper. Due to spectral response of solar cells with the examined nc-Si thin films as active elements showed a narrower spectral distribution and a blue shift comparing...
Liquid Crystal Thermography (LCT) is commonly used for hotspot identification and peak-temperature measurement in electronic devices. We use LCT to characterize GaN/Si and GaN/SiC high-electron mobility transistors and extract the thermal boundary resistance between the GaN epilayers and the substrate on these transistors.
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