The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, an X-band internally-matched GaN HEMT high efficiency amplifier is presented, which is equipped with second harmonic control circuits to enhance the efficiency of the GaN HEMT. The internal matching circuit was designed so that the 2nd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 57% was successfully obtained with 12.5W output power at X-band. This is the...
The classical Doherty configuration suffers from a lack of accurate control of the load impedance performed by the peaking stage. The result is a reduction in the maximum obtainable efficiency and linearity performance for a given input power level. By driving the carrier and peaking power amplifiers independently, it is possible to present the optimum load to the carrier stage for either maximum...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.