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A spread spectrum technique and apparatus for reducing electromagnetic interference (EMI) in class D amplifier are introduced. The technique utilizes very simple hardware, where the switching frequency of a class D amplifier is dynamically varied from 1 to 1.22 MHz. This is achieved by changing the charging current of an oscillator in a random fashion, through 6 switches that are controlled by 6 random...
In this paper, a novel NCO architecture is presented. The error-free computational property of Galois fields is used to improve the NCO performance, which is commonly restricted by the phase truncation effect in the traditional sine look-up table based architecture. Compared with the conventional digital oscillator, the frequency switching time of our design is reduced largely, which makes it attractive...
This paper reports a Digitally Controlled Oscillator (DCO) with 20kHz frequency resolution. This is the first DCO implementing capacitor delta tuning and Dynamic Element Matching (DEM) to suppress process variations and mismatches between small capacitor deltas. The DCO is fabricated in 0.13μm CMOS IBM technology. The proposed DEM technique reduced the process variations and mismatches from 95% to...
Two high-accuracy RC Oscillators with different trimming control are demonstrated in this paper. The two oscillators use voltage trimming and current trimming respectively. The experiment results, obtained from the circuits fabricated in 0.5 μm CMOS process indicate the IC oscillators provide a 160KHz clock signal with a frequency spread of ±10% before the trimming. After centering the oscillator...
In this paper, a high-accuracy CMOS on-chip RC oscillator (OSC) for MCU application is presented. The oscillator can provide a 16 MHz output frequency with the total accuracy in ±1% in all process corner at 1.8 v and 55°C condition, ±2% in all process, supply voltage and temperature condition after 7bit digital trimming. This design features low sensitivity to power supply from 1.8 v to 6.0 v and...
An ultra-low power, self-calibrated clock generator for UHF RFID transponder is presented and fabricated. The frequency can be calibrated automatically by applying successive approximation technique. Frequency variation is less than ±4% of nominal 320 kHz with a rather wide supply voltage range from 0.7V to 1.6V and temperature range from -50°C to 120°C. The whole circuit consumes only 360nW at 0...
In this paper, the fundamental principle of bipolar process-based current-controlled PWM switching power supply is presented. The advantages of current-controlled PWM switching power supply are pointed out, and the design, operational principle, and layout of major functional units of the circuit are briefly described. The operating frequency of the circuit is up to 1MHz. The current-controlled PWM...
This paper presents a coupled oscillator configured with multiple-input differential buffers. Theoretical analysis and simulated results indicate the advantage of low timing-jitter. Furthermore, we also explore the influence of thermal noise in frequency and time domains. By employing linear noise models, we also derive phase noise performance for the proposed coupled oscillators.
In this paper, electron mobility (μ<;sub>e<;/sub>) and hole mobility (μ<;sub>h<;/sub>) of (110) nFETs and pFETs are studied, respectively. It is demonstrated that, because of the non-parabolicity along <;110>, the conventional effective mass model is insufficient to accurately evaluate the quantum confinement effects in (110) nFETs..
Silicon nanowire transistor with side-gate and back-gate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-on-insulator wafer. The effects of back-gate and side-gate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations...
Terahertz (THz) technology has attracted rapidly increasing attention due to a very broad range of potential applications, e.g., medical imaging and homeland security. Perhaps more importantly, developing electronic devices capable of operating at THz frequencies will have great impact on future generation computation and communication. Despite enormous effort in recent years, THz field is still largely...
We report on our recent results of terahertz oscillators with resonant tunneling diodes (RTDs) at room temperature. By a structure with high current density and small capacitance, a fundamental oscillation at 831 GHz was obtained in GaInAs/AlAs double-barrier RTDs integrated with slot antennas. A comparison with theoretical analysis shows a possibility of electron transition from the Γ to L bands...
A CMOS ASIC has been designed and implemented for readout and control of MEMS vibratory gyroscopes. A low noise design is achieved by using the technique of sinusoidal chopper stabilization with a chopping frequency of 2MHz, which will effectively suppress the low frequency noise. A closed loop control method in driving mode is presented. The Chip is fabricated in a 0.35μm standard CMOS process with...
Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection...
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the...
An improved 4H-SiC MESFETs with varied p-buffer layer thickness is proposed, and the static and dynamic electrical performances are analyzed in this paper. The variation in p-buffer layer depth leads to the change in the active channel thickness and modulates the electric field distribution inside the channel. Detailed numerical simulations demonstrate that the saturation drain current and the maximum...
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