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Electroabsorption properties of 1.3mum InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.
Relaxation and emission dynamics of a dense quantized magneto-plasma excited by intense femtosecond laser pulses in In0.2Ga0.8As/GaAs multiple quantum wells are probed by time-resolved transient absorption and time-resolved photoluminescence experiments in high magnetic fields.
We demonstrate second harmonic generation from a single GaAs nanoneedle with a wurtzite crystal structure. The optical anisotropy of the polar crystal results in strong nonlinear optical conversion compared to normal zincblende GaAs.
We report an experimental study of pulsed Raman gain in As2Se3 chalcogenide fiber, for pump pulses between 1470 nm and 1560 nm, achieving the highest Raman gain at the longest pump wavelength, where two-photon absorption is lowest.
O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
We report GaAs-based transverse-junction-superluminescent-diodes, characterized as transverse-carrier-flow spread in quantum wells horizontally instead of vertical well-by-well injection. These devices overcome the problem of non-uniform-carrier-distribution and operate at a bio-optical window of 1.1-mum wavelength regime.
Spin-polarized electron transport in GaAs is studied with emphasis on the role of holes. Sub-picosecond ac spin current pulses are produced and ambipolar spin diffusion are studied, both dominated by space charge field of holes.
We have investigated the fabrication and characterization of 3-dimensionally confined optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes. Such microcavities on Si are free of defects and exhibit a Q-factor of 3,000.
The optical gain dynamics in an InGaAs/AlInAs quantum cascade laser is studied by midinfrared pump-probe experiments and electro-optic sampling. We find an extremely fast gain recovery time of <1 ps.
We demonstrate a surface-normal modulator based on free-carrier effect in GaAs and phase-to-amplitude conversion coupling to a single mode fiber. Operation over 1200-2400 nm, modulation depth up to 43% and frequency up to 270 MHz is observed.
Temporal characteristics of band-edge photonic crystal lasers were explored with high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 mum with temporal responses indicating modulation speeds greater than 25 GHz.
We present a polarization-insensitive, electrically tunable metamaterial operating at terahertz (THz) frequencies and demonstrate the fast modulation of a propagating THz wave. The structure is composed of gold crosses on n-doped gallium arsenide (GaAs).
Second-harmonic generation is demonstrated in periodically intermixed GaAs/AlGaAs superlattice waveguides by Type-II phase matching. Second-harmonic powers of 2.0 muW were generated at fundamental phase matching wavelength of 1577.4 nm.
We experimentally observe truly random to non-thermal to thermal distribution of population of InAs quantum dots with temperature using unamplified spontaneous emission and measure the impact on laser operation.
The spin of an electron in an InAs/GaAs quantum-dot molecule is optically prepared and nondestructively measured through trion-triplet states. With two-laser transmission spectroscopy we demonstrate both simultaneously, something not previously accomplished in single quantum dots.
We discuss design and tuning of second-harmonic generation in a GaAs microdisk. Quasi-phasematching is automatically achieved in a microdisk geometry, but efficient mixing requires resonating all waves, which leads to stringent tuning requirements.
We demonstrate all-optical modulation via ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The low switching(absorption) energy~120 fJ(10 fJ), and fast response(~15 ps), limited only by carrier lifetime, suggest practical all-optical switching applications.
We report quantitative spectrally-resolved transient absorption in GaAs quantum wells for varying pump intensity. Comparison to microscopic modeling yields quantitative information about the Coulomb-induced nonlinearities and radiative coupling.
We report on all-epitaxial growth of large diameter (3-inch), large aperture (>1.5 mm thick), low-loss (<0.005 cm-1) QPM GaAs. 2-mum-laser-pumped OPO performance was comparable to that of ZnGeP2.
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