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This paper describes a single stage distributed amplifier with 10 dB gain in the 0.15 - 4.98 GHz frequency range. The amplifier uses four packaged GaAs MESFETS and was constructed on a microstrip, 4X2 inch circuit.
This paper details the fabrication and performance of a low-k RF MEMS capacitive switch on gallium arsenide (epsivr =12.9) substrate. The switch is fabricated using GaAs MMIC compatible MEMS specific surface micromachining techniques. The switch posses a movable metallic bridge which pulls down onto a metal/dielectric sandwich to form a capacitive contact. The bridge consists of a proof mass which...
This paper describes the design and measured performance of 18-40 GHz MMIC low noise amplifier developed for mm-wave point to point, SATCOM, LMDS, VSAT and EW applications. A two stage amplifier has been designed and developed on 4-mil thick InGaAs pHEMT with a mature gate length of 0.15 mum low noise process from the foundry, namely, WIN Semiconductor Corp., Taiwan. Two range couplers were incorporated...
Results of small-signal modeling of 0.7 um gate length ion-implanted MESFETs are presented here. Modeling included scalability with respect to number of gate fingers and gate bias dependence of equivalent circuit parameters (E.C.Ps). GaAs MESFETs with unit gate width of 150 mum and varying number of gate fingers (from 4 to 8) keeping all other structural parameters constant were fabricated for this...
In this paper we will report analysis of a quantum-well (160 Aring QW) Transistor Laser with 150 mum cavity length using a charge control model in order for modifying QW location through base region. The analysis shows significant enhancement, at constant bias currents, in optical bandwidth due to moving the QW in the direction of collector-base junction. No remarkable resonance peak, limiting factor...
A 3.1 to 3.5 GHz monolithic GaAs two-bit phase shifter (90deg & 180deg) have designed and realized. The small signal simulated and measured results have presented. A 3.1 to 3.5 GHz phase shifter has designed using switch-network phase shifter topology. The low pass and high pass filter have the most commonly used networks in switch network phase shifter. By switching between the phase shifting...
A theoretical model of Impact Ionization rate is proposed in this paper. Multistage scattering processes are considered which incorporate electron-electron scattering, hole-hole scattering, optical phonon scattering and impact ionization. The effect of high carrier concentration on carrier mobility and effective mass has been taken into account and the resulting modification in the ionization rate...
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