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The presentation will discuss the future memory technologies beyond the 30 nm node, especially for DRAM, NAND Flash, new memories such as Phase change RAM (PRAM), and ferroelectric RAM (FRAM), and novel device structure technologies, which include how far we can extend so far successful conventional semiconductor memories. First of all, business demands and new applications of memories will be summarized...
Silicon MEMS as electrostatically levitated rotational gyroscope and 2D optical scanner, and wafer level packaged devices as integrated capacitive pressure sensor and MEMS swatch are described. MEMS which use non-silicon materials as diamond, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography...
MOSFET scaling has served our industry well for several decades by providing significant improvements in performance, density and power, but traditional MOSFET scaling has run into hard roadblocks. Interconnect and patterning technologies have also run into significant limitations when trying to follow traditional scaling methods. The past few years have seen the introduction of new materials and...
IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new Vdd scaling scenario. Green transistor (gFET) is based on tunneling and provides Ion and Ioff far superior to MOSFET at 0.2V if suitable low-Eg material is introduced into IC manufacturing.
We explore options for device scaling beyond the conventional scaling path. We examine the role of the parasitic capacitance for determining the performance of future one-dimensional FETs. We also explore a possible device scaling path that focuses on aggressive scaling of the contacted gate pitch, which provides performance improvements at both the device and circuit level.
Continuous device scaling has led to the development of various transistors such as Ultra-Thin-Body SOI MOSFET, FinFET, and gate all around (GAA) MOSFETs . As the device shrinks further, the ultimate MOSFET structure would be GAA nanowire MOSFET with a fully depleted channel thoroughly controlled by the gate electrode. In this paper, fabrication processes of silicon nanowire MOSFETs on bulk Si using...
Power dissipation has recently overtaken performance as the most important challenge in scaling nanoscale transistors. In this paper, we have proposed and preliminarily analyzed novel device concepts to reduce both the off-state leakage dissipation as well as the dynamic power consumption. The off-state leakage can be selectively suppressed using a wide bandgap drain heterojunction architecture. On...
An overview of the science and technological aspects of Si-based nanodevices relevant to n+4 technology node and beyond is presented in this paper. Nanoscale CMOS and beyond-CMOS devices, based on innovative concepts, technologies and device architectures, are addressed.
The national program for Tera-level Nanodevices (TND) serves as a frontier research resource to a broad range of nanoscale electronics areas. Outstanding nanoscale devices have been achieved and are being further developed using core technologies such as fast nanoscale molecular assembly, damage-free nano-etch process with a neutral beam and nano-rod and particle formation technology. Sub-30 nm scale...
The work addresses benefits and performance impacts resulted from CMOS gate height reduction. The experiment shows that capacitance arising between the CMOS source/drain contact and the gate electrode decreases about linearly as the gate height scales down. The result also shows that stress liner techniques continue providing strong performance enhancement for CMOS as the gate height scales from 100...
In this paper, voltage transfer characteristic (VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is extracted. TSNWFETs with 40 nm gate length and 10 nm nanowire diameter are used to construct inverter. Gain, switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on TSNWFETs. In addition, these performance parameters...
In this paper, experimental studies on the carrier transport in silicon nanowire transistors (SNWTs) are reported, demonstrating their great potential as an alternative device structure for near-ballistic transport from top-down approach. Both ballistic efficiency and apparent mobility were characterized. A modified experimental extraction methodology for SNWTs is proposed, which takes into account...
The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.
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