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We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology...
This paper presents an overview of the electronic implementation of quantum-dot cellular automata (QCA). QCA is a computing paradigm that encodes and processes information by the position of individual electrons. This opens the possibility of dense, ultra-low power devices. Resent results are presented from QCA cells implemented using metal-dots, as well as investigations toward molecular and silicon...
Carbon nanotube (CNT) based bioconjugates are among the candidates for molecular level electronics. In this work, we have studied transport mechanism of single walled carbon nanotube (SWNT) - peptide nucleic acid (PNA) bioconjugates. Electrical conductivity of the bioconjugates was studied at temperatures ranging from 70 K to 350 K. Negative differential resistance (NDR) behavior was observed at almost...
The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies...
Low resistance Ti/Al/Ni/Au Ohmic contact to (NH4)2Sx treated n-type GaN has been studied in the temperature range from 25??C to 600??C It is found that the specific contact resistivity ??c of the sample treated with (NH4)2Sx solution for 5 min at 90??C decreases with increasing measuring temperature, while the ??c of the sample treated with (NH4)2Sx solution for 25 min at 90??C increases with increasing...
Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates??...
A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis. In the injection method, phosphorus reacts with indium very quickly so that the rapid polycrystalline synthesis is possible. The injection speed, melt temperature, phosphorus excess, and so on are also important for a successful synthesis process. About 3200-4800 g stoichiometric high...
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower...
Experimental electrical property data on silicon grain boundaries (GBs) are reported on a unique sample set consisting of direct silicon bonded (110)/(100) hybrid orientation wafers using C-V, I-V, and MOS capacitance transient techniques. For the relatively clean interfacial bonded GB, the density of GB states NT is on the order of 1012 eV-1cm-2, and the charge neutral level is at ~0.53 eV from the...
Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within...
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
In this paper, we investigated the broad sensitized luminescence properties of the Er-doped HfO2 films synthesized by pulsed laser deposition and ion implantation techniques, focusing on the mechanism of energy transfer in host matrix. The characteristics of photoluminescence (PL) in the Er-doped and undoped HfO2 films were analyzed with varied measuring temperatures. Based on the PL and PL excitation...
CdSxSe1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when...
Magnetotransport study has been performed on AlxGa1-xN/GaN heterostructures at low temperatures and high magnetic fields. The magneto-intersubband scattering effect of the two-dimensional electron gas (2DEG) has been observed in the triangular quantum well at the heterointerface. It is found that the effective mass of the 2DEG have strong dependence on the magnetic field and the 2DEG density due to...
Magnetotransport properties of the two-dimensional electron gas (2DEG) in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the 2DEG concentration increases and the SdH oscillation...
Different wafer bonding techniques for heterogeneous integration are compared; in particular, the advantages and disadvantages of metal bonding using isothermal solidification (ITS) process are investigated. In applying the ITS metal bonding to Si and GaAs integrated circuits, two distinct approaches - pre-patterning and post-patterning, are developed and the resulting metal bond properties, such...
A mobile TV tuner baseband for the newly established China Mobile Multimedia Broadcasting (CMMB) is presented. The baseband VGA achieves more than 40 dB gain tuning with temperature compensation. The baseband filter provides 0.5 dB passband ripple and 35 dB attenuation at 6 MHz with the cutoff frequency at 4 MHz. In addition, the calibration of filter is reported to achieve the bandwidth accuracy...
This paper presents a low-cost, high-performance sensor interface for resistive platinum temperature sensors with a long connection cable. The interface design is based on the use of a relaxation oscillator. The effects of interference and parasitic elements are reduced by applying some classical and new measurement techniques in the sensor interface design. The sensor is supplied with a DC excitation...
A design of a CMOS bandgap voltage reference and reference current generator is described and the measurement results are presented in wide temperature range. Using by the resistive subdivision method, the reference circuit is operated with low supply. The measured reference voltage is 630 mV and temperature coefficient of bandgap reference is 29 ppm/??C from -10??C to 100??C with 1.2 V supply voltage...
Tire Pressure Monitoring System (TPMS) plays an important role in automobile safety. This paper proposes the concept of the battery-less TPMS on chip and in package (SoC + SiP) to overcome the disadvantages associated with batteries. In this system, power recovery circuit takes the place of battery. To improve the performance of the power recovery circuit, a special rectifier is designed in this paper.
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